JAN2N4150
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- Mfr.Part #
- JAN2N4150
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 70V 10A TO5
- Stock
- 41,848
- In Stock ：
- 41,848
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Wire
- Qualification Status :
- Qualified
- Operating Temperature :
- -65°C~200°C TJ
- Series :
- Military, MIL-PRF-19500/394
- Configuration :
- Single
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Number of Pins :
- 3
- Mount :
- Through Hole
- RoHS Status :
- Non-RoHS Compliant
- Power Dissipation :
- 1W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Time-Max (ton) :
- 550ns
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 5A 5V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Radiation Hardening :
- No
- JESD-609 Code :
- e0
- Emitter Base Voltage (VEBO) :
- 10V
- Packaging :
- Bulk
- Published :
- 2007
- Pbfree Code :
- No
- Mounting Type :
- Through Hole
- Case Connection :
- COLLECTOR
- Max Power Dissipation :
- 1W
- Current - Collector Cutoff (Max) :
- 10μA
- Turn Off Time-Max (toff) :
- 2000ns
- Terminal Position :
- BOTTOM
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 1A, 10A
- Max Collector Current :
- 10A
- Collector Emitter Voltage (VCEO) :
- 70V
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 22 Weeks
- Collector Base Voltage (VCBO) :
- 100V
- Transistor Element Material :
- SILICON
- Datasheets
- JAN2N4150
NPN -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N4150 Overview
In this device, the DC current gain is 40 @ 5A 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 1A, 10A.With the emitter base voltage set at 10V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.
JAN2N4150 Features
the DC current gain for this device is 40 @ 5A 5V
the vce saturation(Max) is 2.5V @ 1A, 10A
the emitter base voltage is kept at 10V
JAN2N4150 Applications
There are a lot of Microsemi Corporation
JAN2N4150 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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