JAN2N3960UB

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Radiation Hardening :

No

Number of Pins :

4

Terminal Finish :

TIN LEAD

Pbfree Code :

No

Package / Case :

3-SMD, No Lead

Configuration :

Single

Series :

Military, MIL-PRF-19500/399

Collector Base Voltage (VCBO) :

20V

Vce Saturation (Max) @ Ib, Ic :

300mV @ 3mA, 30mA

Collector Emitter Voltage (VCEO) :

12V

Pin Count :

3

Max Power Dissipation :

400mW

Polarity/Channel Type :

NPN

Number of Elements :

1

Mount :

Surface Mount

Transistor Element Material :

SILICON

Operating Temperature :

-65°C~200°C TJ

Packaging :

Bulk

Transistor Application :

SWITCHING

JESD-609 Code :

e0

Reference Standard :

MIL-19500/399

JESD-30 Code :

R-CDSO-N3

Current - Collector Cutoff (Max) :

10μA ICBO

Mounting Type :

Surface Mount

Published :

2007

Terminal Position :

Dual

Number of Terminations :

3

Transistor Type :

NPN

RoHS Status :

Non-RoHS Compliant

Power - Max :

400mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA 1V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)