JAN2N3868S
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- Mfr.Part #
- JAN2N3868S
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.003A TO39
- Stock
- 9,365
- In Stock ：
- 9,365
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 1W
- RoHS Status :
- Non-RoHS Compliant
- Number of Pins :
- 3
- JESD-609 Code :
- e0
- Mounting Type :
- Through Hole
- Series :
- Military, MIL-PRF-19500/350
- Pbfree Code :
- No
- Max Collector Current :
- 3A
- Collector Emitter Voltage (VCEO) :
- 60V
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Published :
- 2007
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Terminal Form :
- Wire
- Qualification Status :
- Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 1.5A 2V
- Pin Count :
- 2
- Max Power Dissipation :
- 1W
- Configuration :
- Single
- Radiation Hardening :
- No
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Packaging :
- Bulk
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Emitter Base Voltage (VEBO) :
- 4V
- Transistor Type :
- PNP
- Case Connection :
- COLLECTOR
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Collector Base Voltage (VCBO) :
- 60V
- Operating Temperature :
- -65°C~200°C TJ
- Factory Lead Time :
- 22 Weeks
- Terminal Position :
- BOTTOM
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 250mA, 2.5A
- Turn Off Time-Max (toff) :
- 600ns
- Datasheets
- JAN2N3868S
PNP -65°C~200°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N3868S Overview
This device has a DC current gain of 30 @ 1.5A 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 4V to achieve high efficiency.The maximum collector current is 3A volts.
JAN2N3868S Features
the DC current gain for this device is 30 @ 1.5A 2V
the vce saturation(Max) is 1.5V @ 250mA, 2.5A
the emitter base voltage is kept at 4V
JAN2N3868S Applications
There are a lot of Microsemi Corporation
JAN2N3868S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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