JAN2N3867S
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- Mfr.Part #
- JAN2N3867S
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.003A TO39
- Stock
- 25,703
- In Stock ：
- 25,703
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 4V
- RoHS Status :
- Non-RoHS Compliant
- Case Connection :
- COLLECTOR
- Max Collector Current :
- 3A
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 250mA, 2.5A
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Terminal Position :
- BOTTOM
- Factory Lead Time :
- 22 Weeks
- Collector Base Voltage (VCBO) :
- 40V
- Transistor Type :
- PNP
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Max Power Dissipation :
- 1W
- JESD-609 Code :
- e0
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Collector Emitter Voltage (VCEO) :
- 40V
- Pbfree Code :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 1.5A 2V
- Qualification Status :
- Qualified
- Series :
- Military, MIL-PRF-19500/350
- Configuration :
- Single
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -65°C~200°C TJ
- Pin Count :
- 2
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Packaging :
- Bulk
- Power Dissipation :
- 1W
- Turn Off Time-Max (toff) :
- 600ns
- Terminal Form :
- Wire
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Mount :
- Through Hole
- Datasheets
- JAN2N3867S
PNP -65°C~200°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N3867S Overview
This device has a DC current gain of 40 @ 1.5A 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 4V to achieve high efficiency.The maximum collector current is 3A volts.
JAN2N3867S Features
the DC current gain for this device is 40 @ 1.5A 2V
the vce saturation(Max) is 1.5V @ 250mA, 2.5A
the emitter base voltage is kept at 4V
JAN2N3867S Applications
There are a lot of Microsemi Corporation
JAN2N3867S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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