JAN2N3867
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- Mfr.Part #
- JAN2N3867
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 40V 0.003A TO5
- Stock
- 40,871
- In Stock ：
- 40,871
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 40V
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Max Power Dissipation :
- 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 1.5A 2V
- Pin Count :
- 2
- Polarity/Channel Type :
- PNP
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Collector Emitter Voltage (VCEO) :
- 40V
- Case Connection :
- COLLECTOR
- Packaging :
- Bulk
- Configuration :
- Single
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 4V
- Number of Pins :
- 3
- Factory Lead Time :
- 22 Weeks
- Terminal Form :
- Wire
- Power Dissipation :
- 1W
- Mount :
- Through Hole
- Max Collector Current :
- 3A
- Series :
- Military, MIL-PRF-19500/350
- Transistor Type :
- PNP
- Turn Off Time-Max (toff) :
- 600ns
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 250mA, 2.5A
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Operating Temperature :
- -65°C~200°C TJ
- Radiation Hardening :
- No
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Transistor Element Material :
- SILICON
- RoHS Status :
- Non-RoHS Compliant
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e0
- ECCN Code :
- EAR99
- Pbfree Code :
- No
- Qualification Status :
- Qualified
- Datasheets
- JAN2N3867
PNP -65°C~200°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N3867S Overview
This device has a DC current gain of 40 @ 1.5A 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 4V to achieve high efficiency.The maximum collector current is 3A volts.
JAN2N3867S Features
the DC current gain for this device is 40 @ 1.5A 2V
the vce saturation(Max) is 1.5V @ 250mA, 2.5A
the emitter base voltage is kept at 4V
JAN2N3867S Applications
There are a lot of Microsemi Corporation
JAN2N3867S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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