JAN2N3715
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- Mfr.Part #
- JAN2N3715
- Manufacturer
- Microchip Technology
- Package / Case
- TO-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 10A TO3
- Stock
- 45,113
- In Stock ：
- 45,113
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-30 Code :
- O-MBFM-P2
- Case Connection :
- COLLECTOR
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Operating Temperature :
- -65°C~200°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- Non-RoHS Compliant
- Number of Pins :
- 3
- Mount :
- Through Hole
- Current - Collector Cutoff (Max) :
- 1mA
- Collector Emitter Voltage (VCEO) :
- 60V
- Terminal Position :
- BOTTOM
- Max Power Dissipation :
- 5W
- JEDEC-95 Code :
- TO-204AA
- Packaging :
- Bulk
- Factory Lead Time :
- 22 Weeks
- Max Collector Current :
- 10A
- Package / Case :
- TO-3
- JESD-609 Code :
- e0
- Number of Terminations :
- 2
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Published :
- 2002
- Transition Frequency :
- 2.5MHz
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Pbfree Code :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 3A 2V
- Radiation Hardening :
- No
- Qualification Status :
- Qualified
- Transistor Application :
- SWITCHING
- Reference Standard :
- MIL
- Pin Count :
- 2
- Emitter Base Voltage (VEBO) :
- 7V
- Power Dissipation :
- 5W
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 2A, 10A
- Terminal Form :
- PIN/PEG
- Configuration :
- Single
- Series :
- Military, MIL-PRF-19500/408
- Collector Base Voltage (VCBO) :
- 80V
- Datasheets
- JAN2N3715
NPN -65°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON NPN TO-3 Bulk Through Hole
JAN2N3715 Overview
In this device, the DC current gain is 30 @ 3A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 2A, 10A.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 2.5MHz.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.
JAN2N3715 Features
the DC current gain for this device is 30 @ 3A 2V
the vce saturation(Max) is 2.5V @ 2A, 10A
the emitter base voltage is kept at 7V
a transition frequency of 2.5MHz
JAN2N3715 Applications
There are a lot of Microsemi Corporation
JAN2N3715 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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