JAN2N3636UB
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- Mfr.Part #
- JAN2N3636UB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS PNP 175V 1A 3SMD
- Stock
- 6,392
- In Stock ：
- 6,392
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 10μA
- Package / Case :
- 3-SMD, No Lead
- Published :
- 2007
- Factory Lead Time :
- 23 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 4 weeks ago)
- Max Power Dissipation :
- 1W
- Pin Count :
- 3
- Turn Off Time-Max (toff) :
- 650ns
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 50mA 10V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Configuration :
- Single
- Operating Temperature :
- -65°C~200°C TJ
- Turn On Time-Max (ton) :
- 200ns
- Power - Max :
- 1.5W
- Qualification Status :
- Qualified
- Collector Emitter Voltage (VCEO) :
- 175V
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- JESD-609 Code :
- e0
- Radiation Hardening :
- No
- Max Collector Current :
- 1A
- Mounting Type :
- Surface Mount
- Pbfree Code :
- No
- Series :
- Military, MIL-PRF-19500/357
- Number of Elements :
- 1
- RoHS Status :
- Non-RoHS Compliant
- Packaging :
- Bulk
- HTS Code :
- 8541.29.00.95
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 175V
- Datasheets
- JAN2N3636UB
PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP 3-SMD, No Lead Bulk Surface Mount
JAN2N3636UB Overview
This device has a DC current gain of 50 @ 50mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 600mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).A maximum collector current of 1A volts is possible.
JAN2N3636UB Features
the DC current gain for this device is 50 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
JAN2N3636UB Applications
There are a lot of Microsemi Corporation
JAN2N3636UB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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