JAN2N3636L
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- Mfr.Part #
- JAN2N3636L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 175V 1A TO5
- Stock
- 37,361
- In Stock ：
- 37,361
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 175V
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Collector Emitter Voltage (VCEO) :
- 175V
- Max Power Dissipation :
- 1W
- Transistor Type :
- PNP
- JESD-609 Code :
- e0
- Radiation Hardening :
- No
- Configuration :
- Single
- Max Collector Current :
- 1A
- Number of Pins :
- 3
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- RoHS Status :
- Non-RoHS Compliant
- Series :
- Military, MIL-PRF-19500/357
- Published :
- 2007
- Pbfree Code :
- No
- Packaging :
- Bulk
- Terminal Form :
- Wire
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 50mA 10V
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Turn On Time-Max (ton) :
- 200ns
- HTS Code :
- 8541.29.00.95
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 1W
- Factory Lead Time :
- 23 Weeks
- Operating Temperature :
- -65°C~200°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- Number of Terminations :
- 3
- Turn Off Time-Max (toff) :
- 650ns
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 10μA
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- Qualification Status :
- Qualified
- Terminal Position :
- BOTTOM
- Datasheets
- JAN2N3636L
PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N3636L Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 50mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.When collector current reaches its maximum, it can reach 1A volts.
JAN2N3636L Features
the DC current gain for this device is 50 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
JAN2N3636L Applications
There are a lot of Microsemi Corporation
JAN2N3636L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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