JAN2N3636
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- Mfr.Part #
- JAN2N3636
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 175V 1A TO39
- Stock
- 14,631
- In Stock ：
- 14,631
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- Configuration :
- Single
- Max Power Dissipation :
- 1W
- Terminal Form :
- Wire
- Packaging :
- Bulk
- ECCN Code :
- EAR99
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Published :
- 2007
- Series :
- Military, MIL-PRF-19500/357
- Collector Base Voltage (VCBO) :
- 175V
- RoHS Status :
- Non-RoHS Compliant
- Terminal Position :
- BOTTOM
- Operating Temperature :
- -65°C~200°C TJ
- Qualification Status :
- Qualified
- Power - Max :
- 1W
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 50mA 10V
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Collector Emitter Voltage (VCEO) :
- 175V
- Current - Collector Cutoff (Max) :
- 10μA
- Pbfree Code :
- No
- Pin Count :
- 2
- Transistor Type :
- PNP
- Mounting Type :
- Through Hole
- Turn Off Time-Max (toff) :
- 650ns
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Max Collector Current :
- 1A
- Factory Lead Time :
- 23 Weeks
- Turn On Time-Max (ton) :
- 200ns
- JESD-609 Code :
- e0
- Transistor Element Material :
- SILICON
- HTS Code :
- 8541.29.00.95
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- Datasheets
- JAN2N3636
PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N3636 Overview
In this device, the DC current gain is 50 @ 50mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 50mA.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
JAN2N3636 Features
the DC current gain for this device is 50 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
JAN2N3636 Applications
There are a lot of Microsemi Corporation
JAN2N3636 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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