JAN2N3584
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- Mfr.Part #
- JAN2N3584
- Manufacturer
- Microchip Technology
- Package / Case
- TO-213AA, TO-66-2
- Datasheet
- Download
- Description
- TRANS NPN 250V 2A TO66
- Stock
- 21,796
- In Stock ：
- 21,796
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- RoHS Status :
- Non-RoHS Compliant
- Max Power Dissipation :
- 2.5W
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Number of Terminations :
- 2
- Power Dissipation :
- 2.5W
- JESD-30 Code :
- O-MBFM-P2
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 375V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 10V
- Terminal Form :
- PIN/PEG
- Case Connection :
- COLLECTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 36 Weeks
- Number of Elements :
- 1
- Max Collector Current :
- 2A
- JESD-609 Code :
- e0
- Operating Temperature :
- -65°C~200°C TJ
- Published :
- 2002
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 125mA, 1A
- Mounting Type :
- Through Hole
- Configuration :
- Single
- Qualification Status :
- Qualified
- Pin Count :
- 2
- Current - Collector Cutoff (Max) :
- 5mA
- Emitter Base Voltage (VEBO) :
- 6V
- Radiation Hardening :
- No
- Terminal Position :
- BOTTOM
- Number of Pins :
- 3
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Collector Emitter Voltage (VCEO) :
- 250V
- Pbfree Code :
- No
- Series :
- Military, MIL-PRF-19500/384
- Packaging :
- Bulk
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Package / Case :
- TO-213AA, TO-66-2
- ECCN Code :
- EAR99
- Datasheets
- JAN2N3584
NPN -65°C~200°C TJ 5mA 1 Elements 2 Terminations SILICON NPN TO-213AA, TO-66-2 Bulk Through Hole
JAN2N3584 Overview
DC current gain in this device equals 25 @ 1A 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 750mV @ 125mA, 1A.An emitter's base voltage can be kept at 6V to gain high efficiency.In extreme cases, the collector current can be as low as 2A volts.
JAN2N3584 Features
the DC current gain for this device is 25 @ 1A 10V
the vce saturation(Max) is 750mV @ 125mA, 1A
the emitter base voltage is kept at 6V
JAN2N3584 Applications
There are a lot of Microsemi Corporation
JAN2N3584 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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