JAN2N3501
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- Mfr.Part #
- JAN2N3501
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 150V 0.3A TO39
- Stock
- 43
- In Stock ：
- 43
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Case Connection :
- COLLECTOR
- Transistor Application :
- SWITCHING
- Qualification Status :
- Qualified
- Collector Emitter Breakdown Voltage :
- 150V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Pbfree Code :
- No
- Emitter Base Voltage (VEBO) :
- 6V
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Mount :
- Through Hole
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 15mA, 150mA
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- RoHS Status :
- Non-RoHS Compliant
- Max Power Dissipation :
- 1W
- Configuration :
- Single
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 150V
- Series :
- Military, MIL-PRF-19500/366
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Wire
- JESD-609 Code :
- e0
- Factory Lead Time :
- 23 Weeks
- Number of Pins :
- 3
- Terminal Position :
- BOTTOM
- Collector Emitter Voltage (VCEO) :
- 150V
- Packaging :
- Bulk
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Power Dissipation :
- 1W
- Operating Temperature :
- -65°C~200°C TJ
- Max Collector Current :
- 300mA
- Number of Elements :
- 1
- Pin Count :
- 2
- Published :
- 2002
- Datasheets
- JAN2N3501
NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N3501 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 15mA, 150mA.The emitter base voltage can be kept at 6V for high efficiency.Single BJT transistor is possible to have a collector current as low as 300mA volts at Single BJT transistors maximum.
JAN2N3501 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 6V
JAN2N3501 Applications
There are a lot of Microsemi Corporation
JAN2N3501 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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