JAN2N3499
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- Mfr.Part #
- JAN2N3499
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 100V 0.5A TO39
- Stock
- 49,198
- In Stock ：
- 49,198
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 30mA, 300mA
- Polarity/Channel Type :
- NPN
- Packaging :
- Bulk
- Max Collector Current :
- 500mA
- Pbfree Code :
- No
- HTS Code :
- 8541.29.00.95
- Pin Count :
- 2
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Case Connection :
- COLLECTOR
- Number of Pins :
- 3
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Terminal Position :
- BOTTOM
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Series :
- Military, MIL-PRF-19500/366
- Max Power Dissipation :
- 1W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Wire
- ECCN Code :
- EAR99
- JESD-609 Code :
- e0
- Turn On Time-Max (ton) :
- 115ns
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 100V
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- RoHS Status :
- Non-RoHS Compliant
- Transition Frequency :
- 150MHz
- Turn Off Time-Max (toff) :
- 1150ns
- Configuration :
- Single
- Published :
- 2007
- Collector Base Voltage (VCBO) :
- 100V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Number of Elements :
- 1
- Factory Lead Time :
- 23 Weeks
- Qualification Status :
- Qualified
- Transistor Element Material :
- SILICON
- Power - Max :
- 1W
- Operating Temperature :
- -65°C~200°C TJ
- Transistor Type :
- NPN
- Datasheets
- JAN2N3499
NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N3499 Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 30mA, 300mA.150MHz is present in the transition frequency.Maximum collector currents can be below 500mA volts.
JAN2N3499 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
a transition frequency of 150MHz
JAN2N3499 Applications
There are a lot of Microsemi Corporation
JAN2N3499 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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