JAN2N3440L
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- Mfr.Part #
- JAN2N3440L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 250V 1A TO5
- Stock
- 20,914
- In Stock ：
- 20,914
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 250V
- Mount :
- Through Hole
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 7V
- Factory Lead Time :
- 22 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 20mA 10V
- Power Dissipation :
- 800mW
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 300V
- Configuration :
- Single
- Terminal Form :
- Wire
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 800mW
- Max Collector Current :
- 1A
- Terminal Position :
- BOTTOM
- JESD-609 Code :
- e0
- Pin Count :
- 3
- Radiation Hardening :
- No
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 4mA, 50mA
- Collector Emitter Voltage (VCEO) :
- 250V
- Polarity/Channel Type :
- NPN
- Packaging :
- Bulk
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C~200°C TJ
- Pbfree Code :
- No
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 2µA
- RoHS Status :
- Non-RoHS Compliant
- Series :
- Military, MIL-PRF-19500/368
- Transistor Type :
- NPN
- Datasheets
- JAN2N3440L
NPN -65°C~200°C TJ 2μA 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N3440L Overview
In this device, the DC current gain is 40 @ 20mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 4mA, 50mA.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
JAN2N3440L Features
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 7V
JAN2N3440L Applications
There are a lot of Microsemi Corporation
JAN2N3440L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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