JAN2N3439UA

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Terminals :

4

Case Connection :

COLLECTOR

Terminal Form :

NO LEAD

Configuration :

Single

Series :

Military, MIL-PRF-19500/368

Product Type :

BJTs - Bipolar Transistors

Operating Temperature :

-65°C ~ 200°C (TJ)

Package Shape :

RECTANGULAR

Collector-Emitter Voltage-Max :

350 V

Frequency - Transition :

-

Brand :

Microchip / Microsemi

Current - Collector (Ic) (Max) :

2 µA

Power - Max :

800 mW

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Reference Standard :

MIL-19500

DC Current Gain-Min (hFE) :

40

Transistor Type :

NPN

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max (Abs) :

5 W

Product Status :

Active

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 20mA, 10V

JESD-609 Code :

e4

Supplier Device Package :

UA

Polarity/Channel Type :

NPN

JESD-30 Code :

R-CDSO-N4

Vce Saturation (Max) @ Ib, Ic :

500mV @ 4mA, 50mA

Current - Collector Cutoff (Max) :

2µA

Mounting Type :

Surface Mount

HTS Code :

8541.21.00.95

RoHS :

N

Number of Elements :

1

Collector Current-Max (IC) :

1 A

Reach Compliance Code :

Compliant

Pin Count :

4

Terminal Position :

Dual

Voltage - Collector Emitter Breakdown (Max) :

350 V

Terminal Finish :

Gold (Au) - with Nickel (Ni) barrier

Qualification Status :

Qualified

Technology :

Si

Package :

Bulk

Package / Case :

4-SMD, No Lead

Surface Mount :

yes

Product Category :

Bipolar Transistors - BJT