JAN2N3439
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- Mfr.Part #
- JAN2N3439
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 350V 1A TO39
- Stock
- 34,412
- In Stock ：
- 34,412
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Frequency :
- 40MHz
- Qualification Status :
- Qualified
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 20mA 10V
- Max Collector Current :
- 1A
- Factory Lead Time :
- 22 Weeks
- JESD-609 Code :
- e0
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 350V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Emitter Base Voltage (VEBO) :
- 7V
- Number of Elements :
- 1
- Power Dissipation :
- 800mW
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Pbfree Code :
- No
- Case Connection :
- COLLECTOR
- Transition Frequency :
- 15MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 4mA, 50mA
- Terminal Position :
- BOTTOM
- Operating Temperature :
- -65°C~200°C TJ
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- Terminal Form :
- Wire
- Mounting Type :
- Through Hole
- Configuration :
- Single
- Polarity/Channel Type :
- NPN
- RoHS Status :
- Non-RoHS Compliant
- Collector Base Voltage (VCBO) :
- 450V
- Series :
- Military, MIL-PRF-19500/368
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 800mW
- Current - Collector Cutoff (Max) :
- 2µA
- Packaging :
- Bulk
- Published :
- 2007
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 350V
- Mount :
- Through Hole
- Datasheets
- JAN2N3439
NPN -65°C~200°C TJ 2μA 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N3439 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 20mA 10V.When VCE saturation is 500mV @ 4mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.In the part, the transition frequency is 15MHz.A maximum collector current of 1A volts can be achieved.
JAN2N3439 Features
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 7V
a transition frequency of 15MHz
JAN2N3439 Applications
There are a lot of Microsemi Corporation
JAN2N3439 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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