JAN2N2905A
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- Mfr.Part #
- JAN2N2905A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A TO39
- Stock
- 15,078
- In Stock ：
- 15,078
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 60V
- Terminal Position :
- BOTTOM
- Pbfree Code :
- No
- Power Dissipation :
- 600mW
- Lead Free :
- Contains Lead
- Pin Count :
- 2
- Polarity/Channel Type :
- PNP
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Number of Pins :
- 3
- Series :
- Military, MIL-PRF-19500/290
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- RoHS Status :
- Non-RoHS Compliant
- Transistor Element Material :
- SILICON
- Terminal Form :
- Wire
- Case Connection :
- COLLECTOR
- Max Collector Current :
- 600mA
- Transition Frequency :
- 200MHz
- JESD-609 Code :
- e0
- Turn On Time-Max (ton) :
- 45ns
- Operating Temperature :
- -65°C~200°C TJ
- Collector Base Voltage (VCBO) :
- 60V
- Power - Max :
- 800mW
- Qualification Status :
- Qualified
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Collector Emitter Voltage (VCEO) :
- 60V
- Transistor Type :
- PNP
- Max Power Dissipation :
- 800mW
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 1μA
- Factory Lead Time :
- 23 Weeks
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 5V
- Configuration :
- Single
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Number of Terminations :
- 3
- Published :
- 2007
- Packaging :
- Bulk
- Datasheets
- JAN2N2905A
PNP -65°C~200°C TJ 1μA 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N2905A Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.6V @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 200MHz is present in the part.Collector current can be as low as 600mA volts at its maximum.
JAN2N2905A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
JAN2N2905A Applications
There are a lot of Microsemi Corporation
JAN2N2905A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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