JAN2N2369A
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- Mfr.Part #
- JAN2N2369A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 15V TO18
- Stock
- 1,843
- In Stock ：
- 1,843
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 10mA, 100mA
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Terminal Form :
- Wire
- JESD-609 Code :
- e0
- Qualification Status :
- Qualified
- Published :
- 2001
- Max Power Dissipation :
- 360mW
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Collector Base Voltage (VCBO) :
- 40V
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Max Collector Current :
- 400nA
- Number of Terminations :
- 3
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Bulk
- Collector Emitter Breakdown Voltage :
- 15V
- Configuration :
- Single
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Collector Emitter Voltage (VCEO) :
- 15V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 100mA 1V
- Transistor Type :
- NPN
- Series :
- Military, MIL-PRF-19500/317
- Pin Count :
- 3
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 4.5V
- Transition Frequency :
- 500MHz
- Pbfree Code :
- No
- Factory Lead Time :
- 23 Weeks
- RoHS Status :
- Non-RoHS Compliant
- Operating Temperature :
- -65°C~200°C TJ
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Mount :
- Through Hole
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Power Dissipation :
- 360mW
- Datasheets
- JAN2N2369A
NPN -65°C~200°C TJ 1 Elements 3 Terminations SILICON NPN TO-206AA, TO-18-3 Metal Can Bulk Through Hole
JAN2N2369A Overview
This device has a DC current gain of 20 @ 100mA 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 450mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 4.5V.As you can see, the part has a transition frequency of 500MHz.A maximum collector current of 400nA volts is possible.
JAN2N2369A Features
the DC current gain for this device is 20 @ 100mA 1V
the vce saturation(Max) is 450mV @ 10mA, 100mA
the emitter base voltage is kept at 4.5V
a transition frequency of 500MHz
JAN2N2369A Applications
There are a lot of Microsemi Corporation
JAN2N2369A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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