JAN2N2222AUB
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- Mfr.Part #
- JAN2N2222AUB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, Non-Standard
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A UB
- Stock
- 1,707
- In Stock ：
- 1,707
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2007
- Emitter Base Voltage (VEBO) :
- 6V
- Current - Collector Cutoff (Max) :
- 50nA
- Min Operating Temperature :
- -65°C
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Power Dissipation :
- 500mW
- Polarity :
- NPN
- Series :
- Military, MIL-PRF-19500/255
- Current - Collector (Ic) (Max) :
- 800mA
- Mount :
- Surface Mount
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Voltage (VCEO) :
- 50V
- Collector Base Voltage (VCBO) :
- 75V
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Package / Case :
- 3-SMD, Non-Standard
- Max Operating Temperature :
- 200°C
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Bulk
- Max Power Dissipation :
- 500mW
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- RoHS Status :
- Non-RoHS Compliant
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 2 weeks ago)
- Collector Emitter Breakdown Voltage :
- 50V
- Max Collector Current :
- 800mA
- Operating Temperature :
- -65°C~200°C TJ
- Power - Max :
- 500mW
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Datasheets
- JAN2N2222AUB
NPN -65°C~200°C TJ 50nA 1 Elements 3-SMD, Non-Standard Bulk Surface Mount
JAN2N2222AUB Overview
DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 800mA volts.
JAN2N2222AUB Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
JAN2N2222AUB Applications
There are a lot of Microsemi Corporation
JAN2N2222AUB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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