JAN2N2222AL
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- Mfr.Part #
- JAN2N2222AL
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A TO18
- Stock
- 29,097
- In Stock ：
- 29,097
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Configuration :
- Single
- Pbfree Code :
- No
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- HTS Code :
- 8541.21.00.95
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Radiation Hardening :
- No
- Reference Standard :
- MIL-19500/255
- Terminal Position :
- BOTTOM
- Qualification Status :
- Qualified
- Number of Pins :
- 3
- Max Collector Current :
- 800mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Packaging :
- Bulk
- Max Power Dissipation :
- 500mW
- Collector Base Voltage (VCBO) :
- 75V
- Transistor Type :
- NPN
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Pin Count :
- 3
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Power - Max :
- 500mW
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 1V
- Case Connection :
- COLLECTOR
- Collector Emitter Breakdown Voltage :
- 50V
- Current - Collector Cutoff (Max) :
- 50nA
- Published :
- 2007
- Operating Temperature :
- -65°C~200°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- JESD-609 Code :
- e0
- Terminal Form :
- Wire
- RoHS Status :
- Non-RoHS Compliant
- Series :
- Military, MIL-PRF-19500/255
- Factory Lead Time :
- 23 Weeks
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- JAN2N2222AL
NPN -65°C~200°C TJ 50nA 1 Elements 3 Terminations SILICON NPN TO-206AA, TO-18-3 Metal Can Bulk Through Hole
JAN2N2222AL Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
JAN2N2222AL Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
JAN2N2222AL Applications
There are a lot of Microsemi Corporation
JAN2N2222AL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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