JAN2N2218A
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- Mfr.Part #
- JAN2N2218A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A TO39
- Stock
- 14,108
- In Stock ：
- 14,108
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Configuration :
- Single
- Mount :
- Through Hole
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 2 weeks ago)
- HTS Code :
- 8541.21.00.95
- Qualification Status :
- Qualified
- Number of Pins :
- 3
- Published :
- 2007
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 10nA
- Operating Temperature :
- -55°C~200°C TJ
- RoHS Status :
- Non-RoHS Compliant
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- No
- Factory Lead Time :
- 23 Weeks
- JESD-609 Code :
- e0
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- Reference Standard :
- MIL-19500/251L
- Series :
- Military, MIL-PRF-19500/251
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 3
- Max Power Dissipation :
- 800mW
- Packaging :
- Bulk
- Transistor Type :
- NPN
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 50V
- Current - Collector (Ic) (Max) :
- 800mA
- Pin Count :
- 3
- Number of Elements :
- 1
- Max Collector Current :
- 800mA
- Collector Base Voltage (VCBO) :
- 75V
- Mounting Type :
- Through Hole
- Terminal Form :
- Wire
- Datasheets
- JAN2N2218A
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NPN -55°C~200°C TJ 10nA 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N2218AL Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 150mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.During maximum operation, collector current can be as low as 800mA volts.
JAN2N2218AL Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
JAN2N2218AL Applications
There are a lot of Microsemi Corporation
JAN2N2218AL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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