JAN2N1893

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Mfr.Part #
JAN2N1893
Manufacturer
Microchip Technology
Package / Case
TO-205AA, TO-5-3 Metal Can
Datasheet
Download
Description
TRANS NPN 80V 0.5A TO5
Stock
47,689
In Stock :
47,689

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Through Hole
Terminal Form :
Wire
ECCN Code :
EAR99
Package / Case :
TO-205AA, TO-5-3 Metal Can
Power Dissipation :
800mW
Lifecycle Status :
IN PRODUCTION (Last Updated: 3 weeks ago)
RoHS Status :
Non-RoHS Compliant
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity/Channel Type :
NPN
Terminal Finish :
Tin/Lead (Sn/Pb)
Published :
2002
Radiation Hardening :
No
Current - Collector Cutoff (Max) :
10μA ICBO
Configuration :
Single
Transistor Type :
NPN
Packaging :
Bulk
Max Collector Current :
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 150mA 10V
JESD-609 Code :
e0
Collector Base Voltage (VCBO) :
120V
Vce Saturation (Max) @ Ib, Ic :
5V @ 15mA, 150mA
Series :
Military, MIL-PRF-19500/182
Qualification Status :
Qualified
Operating Temperature :
-65°C~200°C TJ
Mount :
Through Hole
Collector Emitter Voltage (VCEO) :
80V
Pbfree Code :
No
Case Connection :
COLLECTOR
Emitter Base Voltage (VEBO) :
7V
Pin Count :
2
Terminal Position :
BOTTOM
Number of Pins :
3
Transistor Element Material :
SILICON
Factory Lead Time :
22 Weeks
Number of Terminations :
3
Max Power Dissipation :
800mW
Datasheets
JAN2N1893
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology JAN2N1893 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-205AA, TO-5-3 Metal Can, Operating Temperature:-65°C~200°C TJ, Number of Pins:3, Number of Terminations:3, JAN2N1893 pinout, JAN2N1893 datasheet PDF, JAN2N1893 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology JAN2N1893 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology JAN2N1893


NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole

JAN2N1893 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 5V @ 15mA, 150mA.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.Collector current can be as low as 500mA volts at its maximum.

JAN2N1893 Features


the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 5V @ 15mA, 150mA
the emitter base voltage is kept at 7V


JAN2N1893 Applications


There are a lot of Microsemi Corporation
JAN2N1893 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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