IXTX46N50L

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

50ns

Product Status :

Active

Terminal Position :

Single

JESD-609 Code :

e1

Drive Voltage (Max Rds On,Min Rds On) :

20V

Power Dissipation (Max) :

700W (Tc)

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

7000pF @ 25V

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

1500 mJ

Channel Mode :

Enhancement

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Polarity :

N-Channel

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 15V

Polarity/Channel Type :

N-Channel

Continuous Drain Current (ID) :

46A

Mounting Style :

Through Hole

Transistor Element Material :

SILICON

Package Shape :

RECTANGULAR

Power Dissipation :

700W

Drain to Source Breakdown Voltage :

500V

Resistance :

160mOhm

Reach Compliance Code :

Compliant

Power Dissipation-Max (Abs) :

700 W

Pin Count :

3

Terminal Form :

THROUGH-HOLE

Pulsed Drain Current-Max (IDM) :

100 A

Brand :

IXYS

Width :

5.21 mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

46A Tc

Factory Lead Time :

24 Weeks

Mount :

Through Hole

Minimum Operating Temperature :

- 55 C

Case Connection :

DRAIN

Pbfree Code :

yes

Number of Terminals :

3

Qualification Status :

Not Qualified

Lead Free :

Lead Free

Type :

Linear Power MOSFET

Terminal Finish :

TIN SILVER COPPER

Rds On (Max) @ Id, Vgs :

160m Ω @ 500mA, 20V

Manufacturer :

IXYS

Length :

16.13 mm

Element Configuration :

Single

JESD-30 Code :

R-PSIP-T3

Mounting Type :

Through Hole

Published :

2007

Additional Feature :

AVALANCHE RATED

Number of Pins :

3

Drain-source On Resistance-Max :

0.16 Ω

Number of Terminations :

3

Package :

Tube

Package / Case :

TO-247-3

RoHS :

Details

Base Product Number :

IXTX46

Number of Channels :

1 Channel

DS Breakdown Voltage-Min :

500 V

Power Dissipation-Max :

700W Tc

Radiation Hardening :

No

FET Feature :

--

Gate to Source Voltage (Vgs) :

30V

Height :

21.34 mm

Supplier Device Package :

PLUS247™-3

Drain to Source Voltage (Vdss) :

500V

Maximum Operating Temperature :

+ 150 C

Series :

--

Vgs(th) (Max) @ Id :

6V @ 250μA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Fall Time (Typ) :

42 ns

Product Category :

MOSFET

Product Type :

MOSFET

Configuration :

Single

Drain Current-Max (Abs) (ID) :

46 A

Surface Mount :

No

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

80 ns

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Transistor Type :

1 N-Channel