IXTX46N50L
- Mfr.Part #
- IXTX46N50L
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 46A PLUS247-3
- Stock
- 46,093
- In Stock :
- 46,093
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 46A
- Power Dissipation (Max) :
- 700W (Tc)
- Product Type :
- MOSFET
- Surface Mount :
- No
- Polarity/Channel Type :
- N-Channel
- Transistor Polarity :
- N-Channel
- Series :
- --
- Qualification Status :
- Not Qualified
- Drain to Source Voltage (Vdss) :
- 500V
- Vgs(th) (Max) @ Id :
- 6V @ 250μA
- Additional Feature :
- AVALANCHE RATED
- Number of Channels :
- 1 Channel
- Rise Time :
- 50ns
- Gate to Source Voltage (Vgs) :
- 30V
- JESD-30 Code :
- R-PSIP-T3
- Number of Terminals :
- 3
- Height :
- 21.34 mm
- Number of Terminations :
- 3
- Maximum Operating Temperature :
- + 150 C
- Terminal Finish :
- TIN SILVER COPPER
- Pulsed Drain Current-Max (IDM) :
- 100 A
- Manufacturer :
- IXYS
- Brand :
- IXYS
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Base Product Number :
- IXTX46
- Power Dissipation-Max (Abs) :
- 700 W
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 700W Tc
- Lead Free :
- Lead Free
- Drain Current-Max (Abs) (ID) :
- 46 A
- Factory Lead Time :
- 24 Weeks
- Supplier Device Package :
- PLUS247™-3
- Packaging :
- Tube
- FET Feature :
- --
- Element Configuration :
- Single
- RoHS :
- Details
- Drain to Source Breakdown Voltage :
- 500V
- Power Dissipation :
- 700W
- Product Status :
- Active
- Input Capacitance (Ciss) (Max) @ Vds :
- 7000pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 160m Ω @ 500mA, 20V
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Channel Mode :
- Enhancement
- Configuration :
- Single
- Length :
- 16.13 mm
- Resistance :
- 160mOhm
- Number of Pins :
- 3
- Pin Count :
- 3
- Reach Compliance Code :
- Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 20V
- Type :
- Linear Power MOSFET
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 80 ns
- Current - Continuous Drain (Id) @ 25°C :
- 46A Tc
- Terminal Form :
- THROUGH-HOLE
- Mounting Type :
- Through Hole
- Width :
- 5.21 mm
- Drain-source On Resistance-Max :
- 0.16 Ω
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Style :
- Through Hole
- Minimum Operating Temperature :
- - 55 C
- Radiation Hardening :
- No
- Published :
- 2007
- Gate Charge (Qg) (Max) @ Vgs :
- 260nC @ 15V
- Fall Time (Typ) :
- 42 ns
- Case Connection :
- DRAIN
- Package Shape :
- RECTANGULAR
- Transistor Type :
- 1 N-Channel
- Package :
- Tube
- Product Category :
- MOSFET
- Mount :
- Through Hole
- Package / Case :
- TO-247-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±30V
- JESD-609 Code :
- e1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- DS Breakdown Voltage-Min :
- 500 V
- Pbfree Code :
- yes
- Terminal Position :
- Single
- Datasheets
- IXTX46N50L
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N-Channel Tube 160m Ω @ 500mA, 20V ±30V 7000pF @ 25V 260nC @ 15V 500V TO-247-3
IXTX46N50L Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 7000pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 46A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Drain current refers to the maximum continuous current a device can conduct, and it is 46 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 80 ns.Peak drain current is 100 A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 500 V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (20V), this device contributes to a reduction in overall power consumption.
IXTX46N50L Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 46A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 100 A.
a 500V drain to source voltage (Vdss)
IXTX46N50L Applications
There are a lot of IXYS
IXTX46N50L applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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