IXTX46N50L

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Mfr.Part #
IXTX46N50L
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 46A PLUS247-3
Stock
46,093
In Stock :
46,093

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
Continuous Drain Current (ID) :
46A
Power Dissipation (Max) :
700W (Tc)
Product Type :
MOSFET
Surface Mount :
No
Polarity/Channel Type :
N-Channel
Transistor Polarity :
N-Channel
Series :
--
Qualification Status :
Not Qualified
Drain to Source Voltage (Vdss) :
500V
Vgs(th) (Max) @ Id :
6V @ 250μA
Additional Feature :
AVALANCHE RATED
Number of Channels :
1 Channel
Rise Time :
50ns
Gate to Source Voltage (Vgs) :
30V
JESD-30 Code :
R-PSIP-T3
Number of Terminals :
3
Height :
21.34 mm
Number of Terminations :
3
Maximum Operating Temperature :
+ 150 C
Terminal Finish :
TIN SILVER COPPER
Pulsed Drain Current-Max (IDM) :
100 A
Manufacturer :
IXYS
Brand :
IXYS
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Base Product Number :
IXTX46
Power Dissipation-Max (Abs) :
700 W
Number of Elements :
1
Transistor Element Material :
SILICON
Power Dissipation-Max :
700W Tc
Lead Free :
Lead Free
Drain Current-Max (Abs) (ID) :
46 A
Factory Lead Time :
24 Weeks
Supplier Device Package :
PLUS247™-3
Packaging :
Tube
FET Feature :
--
Element Configuration :
Single
RoHS :
Details
Drain to Source Breakdown Voltage :
500V
Power Dissipation :
700W
Product Status :
Active
Input Capacitance (Ciss) (Max) @ Vds :
7000pF @ 25V
Rds On (Max) @ Id, Vgs :
160m Ω @ 500mA, 20V
Avalanche Energy Rating (Eas) :
1500 mJ
Channel Mode :
Enhancement
Configuration :
Single
Length :
16.13 mm
Resistance :
160mOhm
Number of Pins :
3
Pin Count :
3
Reach Compliance Code :
Compliant
Drive Voltage (Max Rds On,Min Rds On) :
20V
Type :
Linear Power MOSFET
RoHS Status :
ROHS3 Compliant
Turn-Off Delay Time :
80 ns
Current - Continuous Drain (Id) @ 25°C :
46A Tc
Terminal Form :
THROUGH-HOLE
Mounting Type :
Through Hole
Width :
5.21 mm
Drain-source On Resistance-Max :
0.16 Ω
Operating Mode :
ENHANCEMENT MODE
Mounting Style :
Through Hole
Minimum Operating Temperature :
- 55 C
Radiation Hardening :
No
Published :
2007
Gate Charge (Qg) (Max) @ Vgs :
260nC @ 15V
Fall Time (Typ) :
42 ns
Case Connection :
DRAIN
Package Shape :
RECTANGULAR
Transistor Type :
1 N-Channel
Package :
Tube
Product Category :
MOSFET
Mount :
Through Hole
Package / Case :
TO-247-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±30V
JESD-609 Code :
e1
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Type :
N-Channel
Operating Temperature :
-55°C~150°C TJ
DS Breakdown Voltage-Min :
500 V
Pbfree Code :
yes
Terminal Position :
Single
Datasheets
IXTX46N50L
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTX46N50L from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Terminations:3, Number of Pins:3, Type:Linear Power MOSFET, Mounting Type:Through Hole, Package / Case:TO-247-3, Operating Temperature:-55°C~150°C TJ, IXTX46N50L pinout, IXTX46N50L datasheet PDF, IXTX46N50L amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTX46N50L ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTX46N50L


N-Channel Tube 160m Ω @ 500mA, 20V ±30V 7000pF @ 25V 260nC @ 15V 500V TO-247-3

IXTX46N50L Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 7000pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 46A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Drain current refers to the maximum continuous current a device can conduct, and it is 46 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 80 ns.Peak drain current is 100 A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 500 V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (20V), this device contributes to a reduction in overall power consumption.

IXTX46N50L Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 46A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 100 A.
a 500V drain to source voltage (Vdss)


IXTX46N50L Applications


There are a lot of IXYS
IXTX46N50L applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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