IXTX40P50P
- Mfr.Part #
- IXTX40P50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET P-CH 500V 40A PLUS247-3
- Stock
- 707
- In Stock :
- 707
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-247-3
- Additional Feature :
- AVALANCHE RATED
- Drain to Source Voltage (Vdss) :
- 500V
- FET Feature :
- --
- Tradename :
- PolarP
- Continuous Drain Current (ID) :
- 40A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Transistor Polarity :
- P-Channel
- Terminal Finish :
- TIN SILVER COPPER
- Pin Count :
- 3
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Product Category :
- MOSFET
- Height :
- 21.34 mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Channels :
- 1 Channel
- Drain-source On Resistance-Max :
- 0.23Ohm
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 28 Weeks
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- P-Channel
- Type :
- PolarP Power MOSFET
- JESD-30 Code :
- R-PSIP-T3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Brand :
- IXYS
- Transistor Application :
- SWITCHING
- Channel Mode :
- Enhancement
- DS Breakdown Voltage-Min :
- 500V
- Base Product Number :
- IXTX40
- Pbfree Code :
- yes
- JESD-609 Code :
- e1
- Packaging :
- Tube
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 3500 mJ
- Qualification Status :
- Not Qualified
- Product Type :
- MOSFET
- Maximum Operating Temperature :
- + 150 C
- Vgs (Max) :
- ±20V
- Manufacturer :
- IXYS
- Terminal Position :
- Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Width :
- 5.21 mm
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- PolarP™
- Power Dissipation (Max) :
- 890W (Tc)
- Gate Charge (Qg) (Max) @ Vgs :
- 205nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 120A
- Rise Time :
- 59 ns
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 890W Tc
- Package :
- Tube
- RoHS :
- Details
- Published :
- 2012
- Product Status :
- Active
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Reach Compliance Code :
- Unknown
- Input Capacitance (Ciss) (Max) @ Vds :
- 11500pF @ 25V
- Length :
- 16.13 mm
- Supplier Device Package :
- PLUS247™-3
- Rds On (Max) @ Id, Vgs :
- 230m Ω @ 20A, 10V
- Datasheets
- IXTX40P50P
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P-Channel Tube 230m Ω @ 20A, 10V ±20V 11500pF @ 25V 205nC @ 10V 500V TO-247-3
IXTX40P50P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 3500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 11500pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 40A continuous drain current (ID).Peak drain current is 120A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 500V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTX40P50P Features
the avalanche energy rating (Eas) is 3500 mJ
a continuous drain current (ID) of 40A
based on its rated peak drain current 120A.
a 500V drain to source voltage (Vdss)
IXTX40P50P Applications
There are a lot of IXYS
IXTX40P50P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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