IXTF1N250

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On, Min Rds On) :

10V

Mounting Type :

Through Hole

Power Dissipation (Max) :

110W

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Reach Compliance Code :

Compliant

JESD-609 Code :

e1

Pbfree Code :

yes

Minimum Operating Temperature :

- 55 C

DS Breakdown Voltage-Min :

2500 V

Package / Case :

ISOPLUS-i4-PAK-3

Pin Count :

3

Maximum Operating Temperature :

+ 150 C

Transistor Polarity :

N-Channel

Transistor Type :

1 N-Channel

Mounting Style :

Through Hole

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1660 pF @ 25 V

Package Shape :

RECTANGULAR

Power Dissipation-Max (Abs) :

110 W

Channel Mode :

Enhancement

Gate Charge (Qg) (Max) @ Vgs :

41 nC @ 10 V

Pulsed Drain Current-Max (IDM) :

6 A

Case Connection :

Isolated

Manufacturer :

IXYS

Vgs (Max) :

±20V

Number of Channels :

1 Channel

Operating Temperature :

-55°C ~ 150°C (TJ)

FET Feature :

-

Package :

Tube

Drain to Source Voltage (Vdss) :

2500 V

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

1A (Tc)

Subcategory :

MOSFETs

Terminal Form :

THROUGH-HOLE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSIP-T3

Drain Current-Max (Abs) (ID) :

1 A

Product Type :

MOSFET

Rise Time :

25 ns

Rds On (Max) @ Id, Vgs :

40Ohm @ 500mA, 10V

Packaging :

Tube

Surface Mount :

No

Number of Elements :

1

Product Status :

Active

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

40 Ω

Vgs(th) (Max) @ Id :

4V @ 250µA

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

Configuration :

Single

Series :

IXTF1N250

Number of Terminals :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Qualification Status :

Not Qualified

Product Category :

MOSFET

Technology :

Si

RoHS :

Details

Brand :

IXYS

Supplier Device Package :

ISOPLUS i4-PAC™