IXTF03N400

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Mfr.Part #
IXTF03N400
Manufacturer
Littelfuse
Package / Case
i4-Pac™-5 (3 Leads)
Datasheet
Download
Description
MOSFET N-CH 4000V 300MA I4PAC
Stock
10,726
In Stock :
10,726

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Rise Time :
16ns
Packaging :
Tube
Supplier Device Package :
ISOPLUS i4-PAC™
Transistor Element Material :
SILICON
Pin Count :
3
Rds On Max :
300 Ω
Power Dissipation :
70W
Fall Time (Typ) :
58 ns
Vgs (Max) :
±20V
Number of Terminals :
3
Current - Continuous Drain (Id) @ 25°C :
300mA Tc
Qualification Status :
Not Qualified
Input Capacitance :
435 pF
Input Capacitance (Ciss) (Max) @ Vds :
435pF @ 25V
FET Type :
N-Channel
Gate to Source Voltage (Vgs) :
20V
Vgs(th) (Max) @ Id :
4V @ 250µA
DS Breakdown Voltage-Min :
4000 V
Power Dissipation-Max :
70W Tc
Mounting Type :
Through Hole
Manufacturer :
IXYS Corporation
Package / Case :
i4-Pac™-5 (3 Leads)
Pulsed Drain Current-Max (IDM) :
0.8A
Terminal Position :
Single
Terminal Form :
THROUGH-HOLE
Operating Temperature :
-55°C~150°C TJ
Polarity/Channel Type :
N-Channel
Surface Mount :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain Current-Max (Abs) (ID) :
0.3A
Additional Feature :
UL RECOGNIZED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Application :
SWITCHING
Configuration :
SINGLE WITH BUILT-IN DIODE
FET Feature :
--
Drain to Source Voltage (Vdss) :
4000V
Package Shape :
RECTANGULAR
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-609 Code :
e1
Number of Elements :
1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Product Status :
Obsolete
Drain-source On Resistance-Max :
300 Ω
RoHS Status :
RoHS Compliant
Number of Terminations :
3
Published :
2009
Turn-Off Delay Time :
86 ns
Drain to Source Breakdown Voltage :
4kV
Case Connection :
Isolated
Operating Mode :
ENHANCEMENT MODE
Package :
Tube
Continuous Drain Current (ID) :
300mA
Max Power Dissipation :
70 W
RoHS :
Compliant
Reach Compliance Code :
Compliant
Rds On (Max) @ Id, Vgs :
300 Ω @ 150mA, 10V
ECCN Code :
EAR99
JESD-30 Code :
R-PSIP-T3
Terminal Finish :
TIN SILVER COPPER
Base Product Number :
IXTF02
Pbfree Code :
yes
Series :
--
Mount :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
16.3nC @ 10V
Drain to Source Resistance :
300 Ω
Power Dissipation (Max) :
70W (Tc)
Power Dissipation-Max (Abs) :
70 W
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Datasheets
IXTF03N400
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTF03N400 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:i4-Pac™-5 (3 Leads), Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, IXTF03N400 pinout, IXTF03N400 datasheet PDF, IXTF03N400 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTF03N400 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTF03N400


N-Channel Tube 300 Ω @ 150mA, 10V ±20V 435pF @ 25V 16.3nC @ 10V 4000V i4-Pac™-5 (3 Leads)

IXTF03N400 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 435pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 300mA amps.In this device, the drain-source breakdown voltage is 4kV and VGS=4kV, so the drain-source breakdown voltage is 4kV in this case.A device can conduct a maximum continuous current of [0.3A] according to its drain current.It is [86 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 0.8A.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 300 Ω.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 4000 V to maintain normal operation.To operate this transistor, you will need a 4000V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTF03N400 Features


a continuous drain current (ID) of 300mA
a drain-to-source breakdown voltage of 4kV voltage
the turn-off delay time is 86 ns
based on its rated peak drain current 0.8A.
single MOSFETs transistor is 300 Ω
a 4000V drain to source voltage (Vdss)


IXTF03N400 Applications


There are a lot of IXYS
IXTF03N400 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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