IXFR34N80

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Mfr.Part #
IXFR34N80
Manufacturer
Littelfuse
Package / Case
ISOPLUS247™
Datasheet
Download
Description
MOSFET N-CH 800V 28A ISOPLUS247
Stock
23,882
In Stock :
23,882

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Subcategory :
MOSFETs
Product Status :
Obsolete
Tradename :
HyperFET
Brand :
IXYS
Terminal Position :
Single
Element Configuration :
Single
Avalanche Energy Rating (Eas) :
3000 mJ
Mount :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
270nC @ 10V
Package Shape :
RECTANGULAR
Base Product Number :
IXFR34
Power Dissipation-Max :
416W Tc
FET Feature :
--
Channel Mode :
Enhancement
Operating Mode :
ENHANCEMENT MODE
Supplier Device Package :
ISOPLUS247™
Pin Count :
3
Product Type :
MOSFET
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Qualification Status :
Not Qualified
Drive Voltage (Max Rds On,Min Rds On) :
10V
Published :
2001
Fall Time (Typ) :
40 ns
Transistor Element Material :
SILICON
RoHS Status :
RoHS Compliant
Rise Time :
45ns
Width :
5.21 mm
Drain-source On Resistance-Max :
0.24Ohm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Application :
SWITCHING
RoHS :
Details
Input Capacitance (Ciss) (Max) @ Vds :
7500pF @ 25V
Lead Free :
Lead Free
Number of Channels :
1 Channel
Terminal Form :
THROUGH-HOLE
Rds On (Max) @ Id, Vgs :
240m Ω @ 17A, 10V
Configuration :
Single
FET Type :
N-Channel
Package / Case :
ISOPLUS247™
Drain to Source Voltage (Vdss) :
800V
Transistor Type :
1 N-Channel
Power Dissipation (Max) :
416W (Tc)
JESD-609 Code :
e1
Number of Pins :
3
Mounting Style :
Through Hole
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Packaging :
Tube
Drain to Source Breakdown Voltage :
800V
Pbfree Code :
yes
Minimum Operating Temperature :
- 55 C
Series :
HiPerFET™
Case Connection :
Isolated
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Turn-Off Delay Time :
100 ns
Transistor Polarity :
N-Channel
Mounting Type :
Through Hole
JESD-30 Code :
R-PSIP-T3
Manufacturer :
IXYS
Polarity/Channel Type :
N-Channel
Current Rating :
28A
Maximum Operating Temperature :
+ 150 C
Product Category :
MOSFET
Additional Feature :
AVALANCHE RATED
Number of Elements :
1
Number of Terminals :
3
DS Breakdown Voltage-Min :
800 V
Vgs(th) (Max) @ Id :
4V @ 8mA
Reach Compliance Code :
Compliant
Operating Temperature :
-55°C~150°C TJ
Pulsed Drain Current-Max (IDM) :
600A
Power Dissipation :
400W
Continuous Drain Current (ID) :
28A
Current - Continuous Drain (Id) @ 25°C :
28A Tc
Vgs (Max) :
±20V
Voltage - Rated DC :
800V
Number of Terminations :
3
Height :
21.34 mm
Length :
16.13 mm
Package :
Tube
Surface Mount :
No
Gate to Source Voltage (Vgs) :
20V
Datasheets
IXFR34N80
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFR34N80 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Package / Case:ISOPLUS247™, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, IXFR34N80 pinout, IXFR34N80 datasheet PDF, IXFR34N80 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFR34N80 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFR34N80


N-Channel Tube 240m Ω @ 17A, 10V ±20V 7500pF @ 25V 270nC @ 10V 800V ISOPLUS247™

IXFR34N80 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.A device's maximum input capacitance is 7500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 28A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=800V, and this device has a drain-to-source breakdown voltage of 800V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 100 ns.Its maximum pulsed drain current is 600A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 800 V.To operate this transistor, you need to apply a 800V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFR34N80 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 600A.
a 800V drain to source voltage (Vdss)


IXFR34N80 Applications


There are a lot of IXYS
IXFR34N80 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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