IXFR140N30P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Channel Mode :

Enhancement

REACH SVHC :

No SVHC

Number of Terminals :

3

DS Breakdown Voltage-Min :

300 V

Package :

Tube

Power Dissipation-Max :

300W Tc

Case Connection :

Isolated

ECCN Code :

EAR99

Maximum Operating Temperature :

+150 °C

Lead Free :

Lead Free

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

26m Ω @ 70A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

14800pF @ 25V

Product Status :

Active

Number of Pins :

3

Radiation Hardening :

No

Element Configuration :

Single

Channel Type :

N

Operating Mode :

ENHANCEMENT MODE

Transistor Type :

1 N-Channel

Package Type :

ISOPLUS247

Tradename :

HiPerFET

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

JESD-30 Code :

R-PSIP-T3

Gate to Source Voltage (Vgs) :

20V

Minimum Operating Temperature :

-55 °C

Power Dissipation-Max (Abs) :

300 W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5V @ 8mA

Brand :

IXYS

Pin Count :

3

Number of Elements :

1

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Product Type :

MOSFET

Gate Charge (Qg) (Max) @ Vgs :

185nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Height :

21.34mm

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

70A

Fall Time (Typ) :

20 ns

Mounting Type :

Through Hole

Package Shape :

RECTANGULAR

MSL :

-

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

82A

Qualification :

-

Surface Mount :

No

Manufacturer :

IXYS

FET Feature :

-

Reach Compliance Code :

Compliant

Avalanche Energy Rating (Eas) :

5000 mJ

Power Dissipation :

300W

Published :

2007

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Pulsed Drain Current-Max (IDM) :

300 A

Pbfree Code :

yes

Mounting Style :

Through Hole

JESD-609 Code :

e1

Product Category :

MOSFET

Threshold Voltage :

5V

Length :

16.13mm

Number of Terminations :

3

Supplier Device Package :

ISOPLUS247™

Series :

HiPerFET™, PolarP2™

Power Dissipation (Max) :

300W (Tc)

Isolation Voltage :

2.5kV

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Drain to Source Voltage (Vdss) :

300V

FET Type :

N-Channel

Configuration :

Single

Number of Elements per Chip :

1

Turn-Off Delay Time :

100 ns

Rise Time :

30ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current Id :

82A

Number of Channels :

1 Channel

Drain-source On Resistance-Max :

0.026ohm

Drain to Source Breakdown Voltage :

300V

Transistor Polarity :

N-Channel

Polarity/Channel Type :

N-Channel

Terminal Form :

THROUGH-HOLE

Qualification Status :

Not Qualified

Width :

5.21mm

Factory Lead Time :

30 Weeks

Package / Case :

ISOPLUS247™

Base Product Number :

IXFR140

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Type :

Polar Power MOSFET HiPerFET

RoHS :

Details

Drive Voltage (Max Rds On,Min Rds On) :

10V