IXFR120N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

9100pF @ 25V

Product Category :

MOSFET

Fall Time (Typ) :

35 ns

JESD-609 Code :

e1

Avalanche Energy Rating (Eas) :

3000 mJ

Channel Mode :

Enhancement

Surface Mount :

No

Continuous Drain Current (ID) :

105A

Manufacturer :

IXYS

Element Configuration :

Single

RoHS Status :

RoHS Compliant

Terminal Position :

Single

Mounting Style :

Through Hole

Polarity/Channel Type :

N-Channel

Product Type :

MOSFET

Length :

16.13 mm

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

200V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Moisture Sensitivity Level (MSL) :

Not Applicable

Height :

21.34 mm

Lead Free :

Lead Free

Minimum Operating Temperature :

- 55 C

Resistance :

17mOhm

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

105A Tc

Transistor Polarity :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 8mA

Power Dissipation :

400W

Package / Case :

ISOPLUS247™

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

200 V

Packaging :

Tube

JESD-30 Code :

R-PSIP-T3

Package :

Tube

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Terminal Form :

THROUGH-HOLE

Base Product Number :

IXFR120

Brand :

IXYS

Radiation Hardening :

No

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.017 Ω

Additional Feature :

AVALANCHE RATED

FET Feature :

--

Gate Charge (Qg) (Max) @ Vgs :

360nC @ 10V

Width :

5.21 mm

ECCN Code :

EAR99

FET Type :

N-Channel

Package Shape :

RECTANGULAR

RoHS :

Details

Number of Channels :

1 Channel

Supplier Device Package :

ISOPLUS247™

Rds On (Max) @ Id, Vgs :

17m Ω @ 60A, 10V

Maximum Operating Temperature :

+ 150 C

Power Dissipation-Max (Abs) :

400 W

Turn-Off Delay Time :

110 ns

Rise Time :

65ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

8 Weeks

Power Dissipation-Max :

417W Tc

Transistor Type :

1 N-Channel

Configuration :

Single

Tradename :

HyperFET

Reach Compliance Code :

Compliant

Pulsed Drain Current-Max (IDM) :

480A

Number of Terminals :

3

Mount :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Power Dissipation (Max) :

417W (Tc)

Drain Current-Max (Abs) (ID) :

105 A

Number of Pins :

3

Published :

2003

Voltage - Rated DC :

200V

Current Rating :

105A

Case Connection :

Isolated

Series :

HiPerFET™

Pin Count :

3

Product Status :

Not For New Designs

Qualification Status :

Not Qualified

Number of Terminations :

3

Drain to Source Breakdown Voltage :

200V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1