IXFR26N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Channel Mode :

Enhancement

Transistor Polarity :

N-Channel

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Surface Mount :

No

Product Category :

MOSFET

Fall Time (Typ) :

50 ns

Package Shape :

RECTANGULAR

Width :

5.21 mm

Factory Lead Time :

30 Weeks

Mounting Type :

Through Hole

Number of Pins :

3

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

1kV

Published :

2008

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

THROUGH-HOLE

Package / Case :

ISOPLUS247™

Manufacturer :

IXYS

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

430m Ω @ 13A, 10V

Mounting Style :

Through Hole

RoHS :

Details

Number of Terminals :

3

Package :

Tube

Packaging :

Tube

Power Dissipation :

290W

Input Capacitance (Ciss) (Max) @ Vds :

11900pF @ 25V

Avalanche Energy Rating (Eas) :

1000 mJ

Minimum Operating Temperature :

- 55 C

Gate to Source Voltage (Vgs) :

30V

Configuration :

Single

Power Dissipation-Max (Abs) :

290 W

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

65A

Power Dissipation (Max) :

290W (Tc)

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Type :

Polar Power MOSFET HiPerFET

Maximum Operating Temperature :

+ 150 C

Tradename :

HiPerFET

Product Status :

Active

Turn-Off Delay Time :

72 ns

Reach Compliance Code :

Compliant

Height :

21.34 mm

Supplier Device Package :

ISOPLUS247™

Additional Feature :

UL RECOGNIZED, AVALANCHE RATED

Drain to Source Voltage (Vdss) :

1000V

Polarity/Channel Type :

N-Channel

Product Type :

MOSFET

Vgs (Max) :

±30V

Base Product Number :

IXFR26

Operating Temperature :

-55°C~150°C TJ

Brand :

IXYS

Number of Elements :

1

Pin Count :

3

Series :

HiPerFET™, PolarP2™

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

15 A

Power Dissipation-Max :

290W Tc

Drain-source On Resistance-Max :

0.43 Ω

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Rise Time :

45ns

JESD-609 Code :

e1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

15A

FET Feature :

--

Transistor Element Material :

SILICON

Length :

16.13 mm

JESD-30 Code :

R-PSIP-T3

Number of Channels :

1 Channel

Gate Charge (Qg) (Max) @ Vgs :

197nC @ 10V

FET Type :

N-Channel

Qualification Status :

Not Qualified

Case Connection :

Isolated

Terminal Position :

Single

Transistor Type :

1 N-Channel

DS Breakdown Voltage-Min :

1000 V