IXFR180N06

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Number of Terminations :

3

Number of Channels :

1 Channel

Product Type :

MOSFET

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Power Dissipation-Max :

560W Tc

RoHS Status :

RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Tradename :

HyperFET

Continuous Drain Current (ID) :

180A

Product Status :

Not For New Designs

Drain to Source Voltage (Vdss) :

60V

Transistor Polarity :

N-Channel

Package / Case :

ISOPLUS247™

Operating Temperature :

-55°C~150°C TJ

Series :

HiPerFET™

Avalanche Energy Rating (Eas) :

3000 mJ

Factory Lead Time :

8 Weeks

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

Number of Pins :

3

Number of Elements :

1

Mounting Style :

Through Hole

Supplier Device Package :

ISOPLUS247™

Drain-source On Resistance-Max :

0.005ohm

Drain to Source Breakdown Voltage :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Brand :

IXYS

Pulsed Drain Current-Max (IDM) :

720A

Vgs(th) (Max) @ Id :

4V @ 8mA

Input Capacitance (Ciss) (Max) @ Vds :

7650pF @ 25V

Fall Time (Typ) :

55 ns

Vgs (Max) :

±20V

Length :

16.13 mm

Power Dissipation :

560W

Published :

2000

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Type :

1 N-Channel

Current - Continuous Drain (Id) @ 25°C :

180A Tc

ECCN Code :

EAR99

Product Category :

MOSFET

Number of Terminals :

3

Maximum Operating Temperature :

+ 150 C

Manufacturer :

IXYS

Base Product Number :

IXFR180

Mount :

Through Hole

Transistor Element Material :

SILICON

Power Dissipation (Max) :

560W (Tc)

Packaging :

Tube

Subcategory :

MOSFETs

Qualification Status :

Not Qualified

Package Shape :

RECTANGULAR

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

5m Ω @ 90A, 10V

FET Feature :

--

JESD-609 Code :

e1

Package :

Tube

Terminal Position :

Single

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Terminal Form :

THROUGH-HOLE

Width :

5.21 mm

JESD-30 Code :

R-PSIP-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

Single

FET Type :

N-Channel

Pin Count :

3

Turn-Off Delay Time :

130 ns

Gate Charge (Qg) (Max) @ Vgs :

420nC @ 10V

Polarity/Channel Type :

N-Channel

Reach Compliance Code :

Compliant

RoHS :

Details

Transistor Application :

SWITCHING

Height :

21.34 mm

DS Breakdown Voltage-Min :

60 V

Rise Time :

100ns

Minimum Operating Temperature :

- 55 C

Case Connection :

Isolated

Channel Mode :

Enhancement