IXFP7N80PM

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

JESD-609 Code :

e3

Transistor Application :

SWITCHING

FET Type :

N-Channel

Continuous Drain Current (ID) :

3.5A

Manufacturer :

IXYS

Maximum Operating Temperature :

+ 150 C

Product Category :

MOSFET

Package :

Tube

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Single

Package Shape :

RECTANGULAR

Mounting Style :

Through Hole

Polarity/Channel Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

3.5A Tc

RoHS Status :

ROHS3 Compliant

Transistor Polarity :

N-Channel

Number of Channels :

1 Channel

Package / Case :

TO-220-3

Width :

4.9 mm

Additional Feature :

AVALANCHE RATED

Drain-source On Resistance-Max :

1.44 Ω

Power Dissipation :

50W

Product Status :

Active

Channel Mode :

Enhancement

Rds On (Max) @ Id, Vgs :

1.44 Ω @ 3.5A, 10V

Terminal Form :

THROUGH-HOLE

Vgs(th) (Max) @ Id :

5V @ 1mA

Number of Terminals :

3

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Reach Compliance Code :

Compliant

Supplier Device Package :

TO-220AB

Packaging :

Tube

Tradename :

HiPerFET

RoHS :

Details

Height :

9.19 mm

Pbfree Code :

yes

Subcategory :

MOSFETs

Turn-Off Delay Time :

55 ns

DS Breakdown Voltage-Min :

800 V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Brand :

IXYS

Configuration :

Single

Published :

2006

Surface Mount :

No

Pin Count :

3

Drain to Source Voltage (Vdss) :

800V

Length :

10.36 mm

Transistor Type :

1 N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Power Dissipation (Max) :

50W (Tc)

Rise Time :

32 ns

Vgs (Max) :

±30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Type :

MOSFET

Number of Terminations :

3

Case Connection :

Isolated

Drain to Source Breakdown Voltage :

800V

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1890pF @ 25V

Power Dissipation-Max :

50W Tc

Avalanche Energy Rating (Eas) :

300 mJ

Minimum Operating Temperature :

- 55 C

Base Product Number :

IXFP7N80

Series :

HiPerFET™, PolarHT™

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSFM-T3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Feature :

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