IXFP12N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Drain Current-Max (Abs) (ID) :

12 A

MSL :

MSL 1 - Unlimited

Channel Type :

N

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Width :

4.83mm

Turn-Off Delay Time :

65 ns

Rise Time :

27ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.5Ohm

Element Configuration :

Single

Surface Mount :

No

Fall Time (Typ) :

20 ns

Packaging :

Tube

Vgs(th) (Max) @ Id :

5.5V @ 1mA

Brand :

IXYS

Qualification :

-

Qualification Status :

Not Qualified

Tradename :

HiPerFET

Minimum Operating Temperature :

-55 °C

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

500V

Mounting Type :

Through Hole

Power Dissipation (Max) :

200W (Tc)

Package :

Tube

FET Feature :

--

Turn On Delay Time :

22 ns

Mounting Style :

Through Hole

Terminal Position :

Single

Vgs (Max) :

±30V

RoHS :

Details

Maximum Operating Temperature :

+150 °C

Pulsed Drain Current-Max (IDM) :

30 A

Avalanche Energy Rating (Eas) :

600 mJ

Product Type :

MOSFET

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

500m Ω @ 6A, 10V

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Continuous Drain Current (ID) :

12A

Drain to Source Voltage (Vdss) :

500V

DS Breakdown Voltage-Min :

500 V

JEDEC-95 Code :

TO-220AB

JESD-609 Code :

e3

Transistor Type :

1 N-Channel

Transistor Polarity :

N-Channel

Manufacturer :

IXYS

Additional Feature :

AVALANCHE RATED

Terminal Form :

THROUGH-HOLE

Package / Case :

TO-220-3

Number of Channels :

1 Channel

RoHS Status :

ROHS3 Compliant

Height :

9.15mm

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Package Type :

TO-220

Input Capacitance (Ciss) (Max) @ Vds :

1830pF @ 25V

Transistor Element Material :

SILICON

Mount :

Through Hole

Pin Count :

3

FET Type :

N-Channel

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Base Product Number :

IXFP12

Power Dissipation-Max (Abs) :

200 W

Continuous Drain Current Id :

12A

Supplier Device Package :

TO-220AB

Number of Pins :

3

Radiation Hardening :

No

Power Dissipation :

200W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Polarity/Channel Type :

N-Channel

Channel Mode :

Enhancement

Reach Compliance Code :

Compliant

Number of Elements per Chip :

1

Series :

HiPerFET™, PolarP2™

Published :

2006

Drain to Source Breakdown Voltage :

500V

Power Dissipation-Max :

200W Tc

JESD-30 Code :

R-PSFM-T3

Factory Lead Time :

26 Weeks

Case Connection :

DRAIN

Number of Terminals :

3

Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

30V

Number of Terminations :

3

Product Status :

Active

Current Rating :

12A

Product Category :

MOSFET

Length :

10.66mm

Package Shape :

RECTANGULAR