IXFP14N60P
- Mfr.Part #
- IXFP14N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 14A TO220AB
- Stock
- 3,355
- In Stock :
- 3,355
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Number of Channels :
- 1 Channel
- Pin Count :
- 3
- FET Feature :
- --
- Rds On (Max) @ Id, Vgs :
- 550m Ω @ 7A, 10V
- Drain-source On Resistance-Max :
- 0.55Ohm
- Factory Lead Time :
- 26 Weeks
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Avalanche Energy Rating (Eas) :
- 900 mJ
- Gate to Source Voltage (Vgs) :
- 30V
- Channel Mode :
- Enhancement
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Current Rating :
- 14A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Transistor Polarity :
- N-Channel
- Mounting Type :
- Through Hole
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs (Max) :
- ±30V
- Manufacturer :
- IXYS
- Number of Terminations :
- 3
- Length :
- 10.66 mm
- Product Status :
- Active
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Mounting Style :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Additional Feature :
- AVALANCHE RATED
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 70 ns
- Published :
- 2008
- ECCN Code :
- EAR99
- Case Connection :
- DRAIN
- Minimum Operating Temperature :
- - 55 C
- Package / Case :
- TO-220-3
- Width :
- 4.83 mm
- Continuous Drain Current (ID) :
- 14A
- Drain to Source Breakdown Voltage :
- 600V
- Terminal Position :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 5.5V @ 2.5mA
- JEDEC-95 Code :
- TO-220AB
- Surface Mount :
- No
- Number of Terminals :
- 3
- Drain to Source Voltage (Vdss) :
- 600V
- Power Dissipation :
- 300W
- Polarity/Channel Type :
- N-Channel
- Rise Time :
- 27ns
- Power Dissipation (Max) :
- 300W (Tc)
- JESD-30 Code :
- R-PSFM-T3
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 600V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package Shape :
- RECTANGULAR
- RoHS :
- Details
- Power Dissipation-Max :
- 300W Tc
- Power Dissipation-Max (Abs) :
- 300 W
- Qualification Status :
- Not Qualified
- Terminal Form :
- THROUGH-HOLE
- Package :
- Tube
- Maximum Operating Temperature :
- + 150 C
- Transistor Type :
- 1 N-Channel
- Supplier Device Package :
- TO-220AB
- Tradename :
- HiPerFET
- Brand :
- IXYS
- Base Product Number :
- IXFP14
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Series :
- HiPerFET™, PolarHT™
- DS Breakdown Voltage-Min :
- 600 V
- Fall Time (Typ) :
- 26 ns
- Height :
- 9.15 mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Product Type :
- MOSFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 25V
- Drain Current-Max (Abs) (ID) :
- 14 A
- Terminal Finish :
- Matte Tin (Sn)
- Pulsed Drain Current-Max (IDM) :
- 42A
- Configuration :
- Single
- Reach Compliance Code :
- Compliant
- Product Category :
- MOSFET
- Datasheets
- IXFP14N60P

N-Channel Tube 550m Ω @ 7A, 10V ±30V 2500pF @ 25V 36nC @ 10V 600V TO-220-3
IXFP14N60P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 900 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2500pF @ 25V.This device has a continuous drain current (ID) of [14A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.A device's drain current is its maximum continuous current, and this device's drain current is 14 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 70 ns.A maximum pulsed drain current of 42A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600 V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFP14N60P Features
the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 42A.
a 600V drain to source voltage (Vdss)
IXFP14N60P Applications
There are a lot of IXYS
IXFP14N60P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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