IXFP14N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

Drain-source On Resistance-Max :

0.55Ohm

Vgs(th) (Max) @ Id :

5.5V @ 2.5mA

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Minimum Operating Temperature :

- 55 C

Additional Feature :

AVALANCHE RATED

Transistor Type :

1 N-Channel

Avalanche Energy Rating (Eas) :

900 mJ

RoHS :

Details

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Base Product Number :

IXFP14

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

30V

Brand :

IXYS

Tradename :

HiPerFET

Drain Current-Max (Abs) (ID) :

14 A

Maximum Operating Temperature :

+ 150 C

Mount :

Through Hole

Channel Mode :

Enhancement

Number of Pins :

3

Series :

HiPerFET™, PolarHT™

Lead Free :

Lead Free

Mounting Type :

Through Hole

Package Shape :

RECTANGULAR

Mounting Style :

Through Hole

Terminal Position :

Single

Fall Time (Typ) :

26 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Height :

9.15 mm

Pulsed Drain Current-Max (IDM) :

42A

Power Dissipation-Max :

300W Tc

Current Rating :

14A

Configuration :

Single

Package :

Tube

Power Dissipation-Max (Abs) :

300 W

Packaging :

Tube

Number of Channels :

1 Channel

Drain to Source Breakdown Voltage :

600V

Transistor Polarity :

N-Channel

Product Category :

MOSFET

Rise Time :

27ns

Terminal Form :

THROUGH-HOLE

Rds On (Max) @ Id, Vgs :

550m Ω @ 7A, 10V

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Product Status :

Active

DS Breakdown Voltage-Min :

600 V

Length :

10.66 mm

Number of Terminations :

3

FET Type :

N-Channel

Published :

2008

JESD-30 Code :

R-PSFM-T3

RoHS Status :

ROHS3 Compliant

Power Dissipation (Max) :

300W (Tc)

Element Configuration :

Single

Power Dissipation :

300W

Pbfree Code :

yes

Number of Elements :

1

Surface Mount :

No

Manufacturer :

IXYS

Pin Count :

3

Vgs (Max) :

±30V

Polarity/Channel Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

Compliant

Drain to Source Voltage (Vdss) :

600V

Product Type :

MOSFET

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

FET Feature :

--

JEDEC-95 Code :

TO-220AB

Continuous Drain Current (ID) :

14A

Turn-Off Delay Time :

70 ns

Number of Terminals :

3

Terminal Finish :

Matte Tin (Sn)

Voltage - Rated DC :

600V

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Supplier Device Package :

TO-220AB

Width :

4.83 mm

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 25V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

26 Weeks