IXFP14N60P

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Mfr.Part #
IXFP14N60P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 600V 14A TO220AB
Stock
3,355
In Stock :
3,355

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tube
Number of Channels :
1 Channel
Pin Count :
3
FET Feature :
--
Rds On (Max) @ Id, Vgs :
550m Ω @ 7A, 10V
Drain-source On Resistance-Max :
0.55Ohm
Factory Lead Time :
26 Weeks
Pbfree Code :
yes
Mount :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Avalanche Energy Rating (Eas) :
900 mJ
Gate to Source Voltage (Vgs) :
30V
Channel Mode :
Enhancement
Current - Continuous Drain (Id) @ 25°C :
14A Tc
Current Rating :
14A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-609 Code :
e3
Transistor Polarity :
N-Channel
Mounting Type :
Through Hole
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Vgs (Max) :
±30V
Manufacturer :
IXYS
Number of Terminations :
3
Length :
10.66 mm
Product Status :
Active
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
Mounting Style :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
36nC @ 10V
Additional Feature :
AVALANCHE RATED
Number of Pins :
3
Turn-Off Delay Time :
70 ns
Published :
2008
ECCN Code :
EAR99
Case Connection :
DRAIN
Minimum Operating Temperature :
- 55 C
Package / Case :
TO-220-3
Width :
4.83 mm
Continuous Drain Current (ID) :
14A
Drain to Source Breakdown Voltage :
600V
Terminal Position :
Single
Operating Temperature :
-55°C~150°C TJ
Lead Free :
Lead Free
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
JEDEC-95 Code :
TO-220AB
Surface Mount :
No
Number of Terminals :
3
Drain to Source Voltage (Vdss) :
600V
Power Dissipation :
300W
Polarity/Channel Type :
N-Channel
Rise Time :
27ns
Power Dissipation (Max) :
300W (Tc)
JESD-30 Code :
R-PSFM-T3
Transistor Element Material :
SILICON
Voltage - Rated DC :
600V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package Shape :
RECTANGULAR
RoHS :
Details
Power Dissipation-Max :
300W Tc
Power Dissipation-Max (Abs) :
300 W
Qualification Status :
Not Qualified
Terminal Form :
THROUGH-HOLE
Package :
Tube
Maximum Operating Temperature :
+ 150 C
Transistor Type :
1 N-Channel
Supplier Device Package :
TO-220AB
Tradename :
HiPerFET
Brand :
IXYS
Base Product Number :
IXFP14
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
1
FET Type :
N-Channel
Series :
HiPerFET™, PolarHT™
DS Breakdown Voltage-Min :
600 V
Fall Time (Typ) :
26 ns
Height :
9.15 mm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Element Configuration :
Single
Product Type :
MOSFET
Input Capacitance (Ciss) (Max) @ Vds :
2500pF @ 25V
Drain Current-Max (Abs) (ID) :
14 A
Terminal Finish :
Matte Tin (Sn)
Pulsed Drain Current-Max (IDM) :
42A
Configuration :
Single
Reach Compliance Code :
Compliant
Product Category :
MOSFET
Datasheets
IXFP14N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFP14N60P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, IXFP14N60P pinout, IXFP14N60P datasheet PDF, IXFP14N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFP14N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFP14N60P


N-Channel Tube 550m Ω @ 7A, 10V ±30V 2500pF @ 25V 36nC @ 10V 600V TO-220-3

IXFP14N60P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 900 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2500pF @ 25V.This device has a continuous drain current (ID) of [14A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.A device's drain current is its maximum continuous current, and this device's drain current is 14 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 70 ns.A maximum pulsed drain current of 42A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600 V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFP14N60P Features


the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 42A.
a 600V drain to source voltage (Vdss)


IXFP14N60P Applications


There are a lot of IXYS
IXFP14N60P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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