IXFP14N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

10.66 mm

Drain to Source Voltage (Vdss) :

600V

Minimum Operating Temperature :

- 55 C

Transistor Type :

1 N-Channel

Mounting Type :

Through Hole

Published :

2008

Turn-Off Delay Time :

70 ns

JESD-609 Code :

e3

RoHS :

Details

Brand :

IXYS

Series :

HiPerFET™, PolarHT™

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 25V

Gate to Source Voltage (Vgs) :

30V

Number of Terminals :

3

Package Shape :

RECTANGULAR

Polarity/Channel Type :

N-Channel

Drain-source On Resistance-Max :

0.55Ohm

Number of Pins :

3

Continuous Drain Current (ID) :

14A

Height :

9.15 mm

Case Connection :

DRAIN

Terminal Form :

THROUGH-HOLE

Mount :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Power Dissipation-Max (Abs) :

300 W

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

600 V

Supplier Device Package :

TO-220AB

FET Type :

N-Channel

Power Dissipation-Max :

300W Tc

Width :

4.83 mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

550m Ω @ 7A, 10V

Base Product Number :

IXFP14

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package :

Tube

Product Type :

MOSFET

Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Manufacturer :

IXYS

Vgs(th) (Max) @ Id :

5.5V @ 2.5mA

Fall Time (Typ) :

26 ns

Rise Time :

27ns

Pbfree Code :

yes

Voltage - Rated DC :

600V

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

Compliant

FET Feature :

--

Product Category :

MOSFET

JEDEC-95 Code :

TO-220AB

Tradename :

HiPerFET

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Package / Case :

TO-220-3

Vgs (Max) :

±30V

Mounting Style :

Through Hole

Terminal Position :

Single

Pin Count :

3

Qualification Status :

Not Qualified

Factory Lead Time :

26 Weeks

Power Dissipation :

300W

Transistor Element Material :

SILICON

Number of Channels :

1 Channel

JESD-30 Code :

R-PSFM-T3

Product Status :

Active

Drain Current-Max (Abs) (ID) :

14 A

Power Dissipation (Max) :

300W (Tc)

Maximum Operating Temperature :

+ 150 C

Surface Mount :

No

Current Rating :

14A

Pulsed Drain Current-Max (IDM) :

42A

ECCN Code :

EAR99

Channel Mode :

Enhancement

Drain to Source Breakdown Voltage :

600V

Additional Feature :

AVALANCHE RATED

Transistor Application :

SWITCHING

Transistor Polarity :

N-Channel

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

900 mJ