IXFP7N60P3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

7A

Power Dissipation-Max (Abs) :

180 W

Mount :

Through Hole

Number of Terminals :

3

Gate Charge (Qg) (Max) @ Vgs :

13.3nC @ 10V

Manufacturer :

IXYS Corporation

Surface Mount :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

7A

Product Status :

Active

FET Type :

N-Channel

Power Dissipation-Max :

180W Tc

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

705pF @ 25V

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Case Connection :

DRAIN

Terminal Form :

THROUGH-HOLE

Rds On (Max) @ Id, Vgs :

1.15 Ω @ 500mA, 10V

DS Breakdown Voltage-Min :

600V

Base Product Number :

IXFP7N60

Transistor Element Material :

SILICON

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

16A

Factory Lead Time :

24 Weeks

Drain-source On Resistance-Max :

1.15 Ω

Series :

HiPerFET™

Published :

2013

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Terminal Position :

Single

Vgs(th) (Max) @ Id :

5V @ 1mA

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Package :

Tube

Power Dissipation (Max) :

180W (Tc)

Package / Case :

TO-220-3

Lead Free :

Lead Free

Pin Count :

3

Reach Compliance Code :

Compliant

Polarity/Channel Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

600V

Configuration :

SINGLE WITH BUILT-IN DIODE

Supplier Device Package :

TO-220AB

Additional Feature :

AVALANCHE RATED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

JESD-30 Code :

R-PSFM-T3

Avalanche Energy Rating (Eas) :

400 mJ

Package Shape :

RECTANGULAR

FET Feature :

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