IXFP7N100P

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Mfr.Part #
IXFP7N100P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1000V 7A TO220AB
Stock
23,948
In Stock :
23,948

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Pins :
3
Power Dissipation-Max (Abs) :
300 W
Qualification Status :
Not Qualified
Supplier Device Package :
TO-220AB
Drain Current-Max (Abs) (ID) :
7A
FET Feature :
--
Transistor Type :
1 N-Channel
Rds On (Max) @ Id, Vgs :
1.9 Ω @ 3.5A, 10V
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
6V @ 1mA
Drain to Source Voltage (Vdss) :
1000V
Surface Mount :
No
Terminal Form :
THROUGH-HOLE
Product Status :
Active
Pbfree Code :
yes
Power (max) P(TOT) :
300W
Operating Mode :
ENHANCEMENT MODE
Channels :
1
Number of Terminals :
3
Gate to Source Voltage (Vgs) :
30V
Mount :
Through Hole
Package Shape :
RECTANGULAR
Max. operating temperature :
+150°C
Tradename :
HiPerFET
Transistor Application :
SWITCHING
Additional Feature :
AVALANCHE RATED
Enclosure :
TO 220AB
Terminal Position :
Single
Product Type :
MOSFET
RoHS Status :
ROHS3 Compliant
RoHS :
Details
Input Capacitance (Ciss) (Max) @ Vds :
2590pF @ 25V
Published :
2012
Mounting Style :
Through Hole
Package :
Tube
Number of Terminations :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Brand :
IXYS
Product Category :
MOSFET
Number of Channels :
1 Channel
Pin Count :
3
Polarity/Channel Type :
N-Channel
Power Dissipation :
300W
Power Dissipation (Max) :
300W (Tc)
JESD-30 Code :
R-PSFM-T3
Lead Free :
Lead Free
Case Connection :
DRAIN
Drain-source On Resistance-Max :
1.9 Ω
Drain to Source Breakdown Voltage :
1kV
Transistor Element Material :
SILICON
Packaging :
Tube
Reach Compliance Code :
Compliant
FET Type :
N-Channel
JEDEC-95 Code :
TO-220AB
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Factory Lead Time :
26 Weeks
Continuous Drain Current (ID) :
7A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
300W Tc
Minimum Operating Temperature :
- 55 C
Pulsed Drain Current-Max (IDM) :
18A
Base Product Number :
IXFP7N100
Operating Temperature :
-55°C~150°C TJ
Avalanche Energy Rating (Eas) :
300 mJ
Current - Continuous Drain (Id) @ 25°C :
7A Tc
DS Breakdown Voltage-Min :
1000 V
Configuration :
Single
Package / Case :
TO-220-3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Content :
1pc(s)
Maximum Operating Temperature :
+ 150 C
Transistor Polarity :
N-Channel
Number of Elements :
1
Series :
HiPerFET™, PolarP2™
Mounting Type :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
47nC @ 10V
Type :
N-Channel
Manuf. code :
IXY
Manufacturer :
IXYS
Element Configuration :
Single
Datasheets
IXFP7N100P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFP7N100P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, Mounting Type:Through Hole, Type:N-Channel, IXFP7N100P pinout, IXFP7N100P datasheet PDF, IXFP7N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFP7N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFP7N100P


N-Channel Tube 1.9 Ω @ 3.5A, 10V ±30V 2590pF @ 25V 47nC @ 10V 1000V TO-220-3

IXFP7N100P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 300 mJ.A device's maximal input capacitance is 2590pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 7A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 1kV and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 7A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 18A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 1000 V.This transistor requires a 1000V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFP7N100P Features


the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 1kV voltage
based on its rated peak drain current 18A.
a 1000V drain to source voltage (Vdss)


IXFP7N100P Applications


There are a lot of IXYS
IXFP7N100P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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