IXFP3N120

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

TO-220AB

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Drain to Source Voltage (Vdss) :

1200V

Base Product Number :

IXFP3

Package :

Tube

Number of Terminations :

3

Threshold Voltage :

5V

Length :

10.66 mm

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Drain Current-Max (Abs) (ID) :

3A

Avalanche Energy Rating (Eas) :

700 mJ

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Mounting Style :

Through Hole

FET Type :

N-Channel

Width :

4.83 mm

Subcategory :

MOSFETs

Rise Time :

15ns

Product Category :

MOSFET

Reach Compliance Code :

Unknown

Fall Time (Typ) :

18 ns

Package / Case :

TO-220-3

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

26 Weeks

Transistor Type :

1 N-Channel

Height :

16 mm

Channel Mode :

Enhancement

Power Dissipation :

200W

Continuous Drain Current (ID) :

3A

Number of Pins :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

RoHS :

Details

Lead Free :

Lead Free

Case Connection :

DRAIN

Product Status :

Active

JEDEC-95 Code :

TO-220AB

REACH SVHC :

No SVHC

Number of Channels :

1 Channel

Type :

HiPerFET Power MOSFET

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Maximum Operating Temperature :

+ 150 C

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Packaging :

Tube

Mount :

Through Hole

Turn-Off Delay Time :

32 ns

JESD-609 Code :

e3

Vgs (Max) :

±20V

Transistor Polarity :

N-Channel

Qualification Status :

Not Qualified

Product Type :

MOSFET

Tradename :

HiPerFET

Input Capacitance (Ciss) (Max) @ Vds :

1050pF @ 25V

Pin Count :

3

Vgs(th) (Max) @ Id :

5V @ 1.5mA

Series :

HiPerFET™

Brand :

IXYS

FET Feature :

--

Additional Feature :

AVALANCHE RATED

Drain to Source Breakdown Voltage :

1.2kV

Rds On (Max) @ Id, Vgs :

4.5 Ω @ 500mA, 10V

Manufacturer :

IXYS

Configuration :

Single

Resistance :

4.5Ohm

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Power Dissipation (Max) :

200W (Tc)

Power Dissipation-Max :

200W Tc

Published :

2004

Minimum Operating Temperature :

- 55 C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED