IXFP36N20X3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HiPerFET™

Transistor Application :

SWITCHING

Power Dissipation (Max) :

176W (Tc)

Power Dissipation-Max :

176W Tc

RoHS :

Details

Tradename :

HiPerFET

FET Feature :

--

Package :

Tube

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Vgs (Max) :

±20V

Number of Elements :

1

Number of Terminations :

3

Reach Compliance Code :

Unknown

Drain to Source Voltage (Vdss) :

200V

Product Type :

MOSFET

Additional Feature :

AVALANCHE RATED

Drain-source On Resistance-Max :

0.045Ohm

Terminal Position :

Single

Mounting Style :

Through Hole

Case Connection :

DRAIN

Number of Channels :

1 Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

300 mJ

Subcategory :

MOSFETs

Channel Mode :

Enhancement

Input Capacitance (Ciss) (Max) @ Vds :

1425pF @ 25V

Rds On (Max) @ Id, Vgs :

45m Ω @ 18A, 10V

Factory Lead Time :

19 Weeks

Minimum Operating Temperature :

- 55 C

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSFM-T3

Manufacturer :

IXYS

Supplier Device Package :

TO-220

DS Breakdown Voltage-Min :

200V

Product Status :

Active

Product Category :

MOSFET

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

Brand :

IXYS

Mounting Type :

Through Hole

Base Product Number :

IXFP36

Vgs(th) (Max) @ Id :

4.5V @ 500μA

Package / Case :

TO-220-3

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Pulsed Drain Current-Max (IDM) :

50A

Drain Current-Max (Abs) (ID) :

36A

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Maximum Operating Temperature :

+ 150 C

Transistor Polarity :

N-Channel

Rise Time :

30 ns