IXFK94N50P2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Min Operating Temperature :

-55°C

Pulsed Drain Current-Max (IDM) :

240 A

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Maximum Operating Temperature :

+ 150 C

Drain to Source Resistance :

55mOhm

Additional Feature :

AVALANCHE RATED

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Packaging :

Tube

Package / Case :

TO-264-3, TO-264AA

Factory Lead Time :

30 Weeks

Type :

PolarP2 HiPerFET

JEDEC-95 Code :

TO-264AA

Mounting Style :

Through Hole

Element Configuration :

Single

Continuous Drain Current (ID) :

94A

JESD-30 Code :

R-PSFM-T3

Terminal Form :

THROUGH-HOLE

Surface Mount :

No

Product Category :

MOSFET

Base Product Number :

IXFK94

Minimum Operating Temperature :

- 55 C

Polarity/Channel Type :

N-Channel

Max Power Dissipation :

1.3 kW

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Manufacturer :

IXYS

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

500V

Product Type :

MOSFET

JESD-609 Code :

e1

Configuration :

Single

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

55mOhm @ 500mA, 10V

Vgs (Max) :

±30V

Series :

HiPerFET™, PolarHV™

Power Dissipation-Max (Abs) :

1300 W

Power Dissipation :

1.3kW

Number of Terminals :

3

Drain Current-Max (Abs) (ID) :

94 A

Tradename :

HiPerFET

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

30V

Radiation Hardening :

No

Lead Free :

Lead Free

Number of Elements :

1

DS Breakdown Voltage-Min :

500 V

Brand :

IXYS

Package Shape :

RECTANGULAR

Input Capacitance :

13.7nF

Power Dissipation (Max) :

1300W (Tc)

Channel Mode :

Enhancement

Package :

Tube

Drain-source On Resistance-Max :

0.055 Ω

Supplier Device Package :

TO-264AA (IXFK)

Rds On Max :

55 mΩ

Power Dissipation-Max :

1300W Tc

Current - Continuous Drain (Id) @ 25°C :

94A Tc

FET Feature :

--

Input Capacitance (Ciss) (Max) @ Vds :

13700pF @ 25V

Number of Channels :

1 Channel

Published :

2010

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

Transistor Polarity :

N-Channel

Avalanche Energy Rating (Eas) :

3500 mJ

Reach Compliance Code :

Compliant

Vgs(th) (Max) @ Id :

5V @ 8mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Type :

1 N-Channel

Max Operating Temperature :

150°C

RoHS :

Details

Subcategory :

MOSFETs

Operating Mode :

ENHANCEMENT MODE

Product Status :

Active

Drain to Source Voltage (Vdss) :

500V