IXFK100N25
- Mfr.Part #
- IXFK100N25
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 100A TO264AA
- Stock
- 48,939
- In Stock :
- 48,939
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Supplier Device Package :
- TO-264AA (IXFK)
- Continuous Drain Current (ID) :
- 100A
- Rds On (Max) @ Id, Vgs :
- 27m Ω @ 50A, 10V
- Base Product Number :
- IXFK100
- Package :
- Tube
- Terminal Form :
- THROUGH-HOLE
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Vgs (Max) :
- ±20V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Pins :
- 3
- Drain Current-Max (Abs) (ID) :
- 100 A
- Rise Time :
- 55ns
- Manufacturer :
- IXYS Corporation
- Qualification Status :
- Not Qualified
- Pin Count :
- 3
- Number of Terminals :
- 3
- Reach Compliance Code :
- Compliant
- Drain to Source Breakdown Voltage :
- 250V
- Surface Mount :
- No
- Package / Case :
- TO-264-3, TO-264AA
- Pulsed Drain Current-Max (IDM) :
- 400A
- Packaging :
- Tube
- Mount :
- Through Hole
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation-Max (Abs) :
- 560 W
- Turn-Off Delay Time :
- 110 ns
- Power Dissipation (Max) :
- 560W (Tc)
- Drain to Source Voltage (Vdss) :
- 250V
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 560W Tc
- Product Status :
- Obsolete
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- DRAIN
- Polarity/Channel Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 250 V
- Package Shape :
- RECTANGULAR
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Factory Lead Time :
- 8 Weeks
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Series :
- HiPerFET™
- Number of Terminations :
- 3
- Additional Feature :
- AVALANCHE RATED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 560W
- Input Capacitance (Ciss) (Max) @ Vds :
- 9100pF @ 25V
- Terminal Position :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Fall Time (Typ) :
- 40 ns
- RoHS Status :
- RoHS Compliant
- Drain-source On Resistance-Max :
- 0.027Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 300nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Feature :
- --
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- JEDEC-95 Code :
- TO-264
- Published :
- 2001
- Datasheets
- IXFK100N25

N-Channel Tube 27m Ω @ 50A, 10V ±20V 9100pF @ 25V 300nC @ 10V 250V TO-264-3, TO-264AA
IXFK100N25 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 9100pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 250V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 250V.There is no drain current on this device since the maximum continuous current it can conduct is 100 A.As a result of its turn-off delay time, which is 110 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 400A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 250 V, it should remain above the 250 V level.The transistor must receive a 250V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFK100N25 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 400A.
a 250V drain to source voltage (Vdss)
IXFK100N25 Applications
There are a lot of IXYS
IXFK100N25 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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