IXFK100N25

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Mfr.Part #
IXFK100N25
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 250V 100A TO264AA
Stock
48,939
In Stock :
48,939

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Supplier Device Package :
TO-264AA (IXFK)
Continuous Drain Current (ID) :
100A
Rds On (Max) @ Id, Vgs :
27m Ω @ 50A, 10V
Base Product Number :
IXFK100
Package :
Tube
Terminal Form :
THROUGH-HOLE
Avalanche Energy Rating (Eas) :
3000 mJ
Vgs (Max) :
±20V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Pins :
3
Drain Current-Max (Abs) (ID) :
100 A
Rise Time :
55ns
Manufacturer :
IXYS Corporation
Qualification Status :
Not Qualified
Pin Count :
3
Number of Terminals :
3
Reach Compliance Code :
Compliant
Drain to Source Breakdown Voltage :
250V
Surface Mount :
No
Package / Case :
TO-264-3, TO-264AA
Pulsed Drain Current-Max (IDM) :
400A
Packaging :
Tube
Mount :
Through Hole
JESD-30 Code :
R-PSFM-T3
Power Dissipation-Max (Abs) :
560 W
Turn-Off Delay Time :
110 ns
Power Dissipation (Max) :
560W (Tc)
Drain to Source Voltage (Vdss) :
250V
Transistor Element Material :
SILICON
Power Dissipation-Max :
560W Tc
Product Status :
Obsolete
Operating Mode :
ENHANCEMENT MODE
Case Connection :
DRAIN
Polarity/Channel Type :
N-Channel
DS Breakdown Voltage-Min :
250 V
Package Shape :
RECTANGULAR
Transistor Application :
SWITCHING
Element Configuration :
Single
Factory Lead Time :
8 Weeks
Pbfree Code :
yes
Number of Elements :
1
Series :
HiPerFET™
Number of Terminations :
3
Additional Feature :
AVALANCHE RATED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
ECCN Code :
EAR99
Gate to Source Voltage (Vgs) :
20V
FET Type :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Power Dissipation :
560W
Input Capacitance (Ciss) (Max) @ Vds :
9100pF @ 25V
Terminal Position :
Single
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Fall Time (Typ) :
40 ns
RoHS Status :
RoHS Compliant
Drain-source On Resistance-Max :
0.027Ohm
Gate Charge (Qg) (Max) @ Vgs :
300nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Feature :
--
Mounting Type :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs(th) (Max) @ Id :
4V @ 8mA
JEDEC-95 Code :
TO-264
Published :
2001
Datasheets
IXFK100N25
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK100N25 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, IXFK100N25 pinout, IXFK100N25 datasheet PDF, IXFK100N25 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK100N25 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK100N25


N-Channel Tube 27m Ω @ 50A, 10V ±20V 9100pF @ 25V 300nC @ 10V 250V TO-264-3, TO-264AA

IXFK100N25 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 9100pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 250V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 250V.There is no drain current on this device since the maximum continuous current it can conduct is 100 A.As a result of its turn-off delay time, which is 110 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 400A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 250 V, it should remain above the 250 V level.The transistor must receive a 250V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFK100N25 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 400A.
a 250V drain to source voltage (Vdss)


IXFK100N25 Applications


There are a lot of IXYS
IXFK100N25 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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