IXFK90N30

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max (Abs) :

560 W

Number of Terminations :

3

Package / Case :

TO-264-3, TO-264AA

Tradename :

HyperFET

Minimum Operating Temperature :

- 55 C

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Vgs(th) (Max) @ Id :

4V @ 8mA

Turn-Off Delay Time :

100 ns

Width :

5.13 mm

Continuous Drain Current (ID) :

90A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Product Status :

Not For New Designs

Channel Mode :

Enhancement

Reach Compliance Code :

Compliant

Drain to Source Voltage (Vdss) :

300V

Additional Feature :

AVALANCHE RATED

Package Shape :

RECTANGULAR

Power Dissipation (Max) :

560W (Tc)

ECCN Code :

EAR99

Supplier Device Package :

TO-264AA (IXFK)

Number of Terminals :

3

Product Type :

MOSFET

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

55ns

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

10000pF @ 25V

Configuration :

Single

Manufacturer :

IXYS

Avalanche Energy Rating (Eas) :

3000 mJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

90 A

Rds On (Max) @ Id, Vgs :

33m Ω @ 45A, 10V

Pin Count :

3

FET Type :

N-Channel

Length :

19.96 mm

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

360nC @ 10V

Power Dissipation :

560W

Power Dissipation-Max :

560W Tc

Brand :

IXYS

Case Connection :

DRAIN

Fall Time (Typ) :

40 ns

Package :

Tube

Surface Mount :

No

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSFM-T3

Height :

26.16 mm

Number of Channels :

1 Channel

Series :

HiPerFET™

Terminal Position :

Single

Transistor Polarity :

N-Channel

JEDEC-95 Code :

TO-264

Transistor Type :

1 N-Channel

Mounting Style :

Through Hole

Product Category :

MOSFET

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS :

Details

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

360 A

Number of Pins :

3

Element Configuration :

Single

DS Breakdown Voltage-Min :

300 V

Pbfree Code :

yes

Base Product Number :

IXFK90

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

300V

RoHS Status :

RoHS Compliant

Drain-source On Resistance-Max :

0.033 Ω

Maximum Operating Temperature :

+ 150 C

Published :

2002

Operating Mode :

ENHANCEMENT MODE

FET Feature :

--

Terminal Form :

THROUGH-HOLE