IXFK90N20Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

90A

JEDEC-95 Code :

TO-264AA

Vgs(th) (Max) @ Id :

4V @ 4mA

Supplier Device Package :

TO-264AA (IXFK)

Reach Compliance Code :

Compliant

Pin Count :

3

Published :

2002

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Brand :

IXYS

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Power Dissipation :

500W

Package / Case :

TO-264-3, TO-264AA

Gate to Source Voltage (Vgs) :

20V

Resistance :

22mOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSFM-T3

Mounting Type :

Through Hole

Current Rating :

90A

FET Type :

N-Channel

Pbfree Code :

yes

Power Dissipation (Max) :

500W (Tc)

Fall Time (Typ) :

12 ns

Number of Terminals :

3

Minimum Operating Temperature :

- 55 C

Package :

Tube

Configuration :

Single

Qualification Status :

Not Qualified

Width :

5.13 mm

Package Shape :

RECTANGULAR

Lead Free :

Lead Free

Base Product Number :

IXFK90

Vgs (Max) :

±20V

Factory Lead Time :

8 Weeks

Operating Temperature :

-55°C~150°C TJ

Product Type :

MOSFET

Maximum Operating Temperature :

+ 150 C

Transistor Type :

1 N-Channel

Length :

19.96 mm

Product Status :

Not For New Designs

Case Connection :

DRAIN

Terminal Form :

THROUGH-HOLE

Pulsed Drain Current-Max (IDM) :

360 A

Number of Elements :

1

Turn-Off Delay Time :

82 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Category :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

6800pF @ 25V

RoHS :

Details

Tradename :

HiPerFET

Surface Mount :

No

Avalanche Energy Rating (Eas) :

2500 mJ

Rds On (Max) @ Id, Vgs :

22m Ω @ 45A, 10V

Additional Feature :

AVALANCHE RATED

Drain to Source Breakdown Voltage :

200V

Power Dissipation-Max (Abs) :

500 W

Manufacturer :

IXYS

FET Feature :

--

Drain-source On Resistance-Max :

0.022 Ω

Drain to Source Voltage (Vdss) :

200V

Power Dissipation-Max :

500W Tc

Height :

26.16 mm

Recovery Time :

200 ns

Number of Pins :

3

Number of Terminations :

3

Series :

HiPerFET™

Voltage - Rated DC :

200V

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

Transistor Polarity :

N-Channel

Polarity/Channel Type :

N-Channel

DS Breakdown Voltage-Min :

200 V

Channel Mode :

Enhancement

Drain Current-Max (Abs) (ID) :

90 A

Moisture Sensitivity Level (MSL) :

Not Applicable

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Mount :

Through Hole

Mounting Style :

Through Hole

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Rise Time :

31ns

ECCN Code :

EAR99

Number of Channels :

1 Channel

Terminal Position :

Single