IXFK74N50P2
- Mfr.Part #
- IXFK74N50P2
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 74A TO264AA
- Stock
- 26,040
- In Stock :
- 26,040
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Polarity/Channel Type :
- N-Channel
- RoHS :
- Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 165nC @ 10V
- Supplier Device Package :
- TO-264AA (IXFK)
- Power Dissipation (Max) :
- 1400W (Tc)
- Transistor Element Material :
- SILICON
- Series :
- HiPerFET™, PolarHV™
- Mounting Type :
- Through Hole
- Reach Compliance Code :
- Compliant
- Package :
- Tube
- Terminal Form :
- THROUGH-HOLE
- Additional Feature :
- AVALANCHE RATED
- Min Operating Temperature :
- -55 °C
- JESD-30 Code :
- R-PSFM-T3
- Number of Terminals :
- 3
- Published :
- 2011
- Number of Elements :
- 1
- Product Status :
- Active
- Drain to Source Breakdown Voltage :
- 500V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain Current-Max (Abs) (ID) :
- 74 A
- Package Shape :
- RECTANGULAR
- Gate to Source Voltage (Vgs) :
- 30V
- Rds On Max :
- 77 mΩ
- JESD-609 Code :
- e1
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Manufacturer :
- IXYS Corporation
- Power Dissipation-Max (Abs) :
- 1400 W
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 74A Tc
- Factory Lead Time :
- 26 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 9900pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Surface Mount :
- No
- FET Type :
- N-Channel
- Pin Count :
- 3
- Package / Case :
- TO-264-3, TO-264AA
- Base Product Number :
- IXFK74
- Case Connection :
- DRAIN
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 77m Ω @ 500mA, 10V
- DS Breakdown Voltage-Min :
- 500 V
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 74A
- Power Dissipation :
- 1.4kW
- Drain to Source Resistance :
- 77 mΩ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 1400W Tc
- Terminal Position :
- Single
- Drain-source On Resistance-Max :
- 0.077Ohm
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Pulsed Drain Current-Max (IDM) :
- 185A
- Element Configuration :
- Single
- Pbfree Code :
- yes
- FET Feature :
- --
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Max Power Dissipation :
- 1.4 kW
- Drain to Source Voltage (Vdss) :
- 500V
- JEDEC-95 Code :
- TO-264AA
- Vgs (Max) :
- ±30V
- Max Operating Temperature :
- 150 °C
- Terminal Finish :
- TIN SILVER COPPER
- Input Capacitance :
- 9.9 nF
- Datasheets
- IXFK74N50P2

N-Channel Tube 77m Ω @ 500mA, 10V ±30V 9900pF @ 25V 165nC @ 10V 500V TO-264-3, TO-264AA
IXFK74N50P2 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 9900pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.There is no drain current on this device since the maximum continuous current it can conduct is 74 A.There is a peak drain current of 185A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 77 mΩ.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 500 V, it should remain above the 500 V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFK74N50P2 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 74A
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 185A.
single MOSFETs transistor is 77 mΩ
a 500V drain to source voltage (Vdss)
IXFK74N50P2 Applications
There are a lot of IXYS
IXFK74N50P2 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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