IXFK74N50P2

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Mfr.Part #
IXFK74N50P2
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 74A TO264AA
Stock
26,040
In Stock :
26,040

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Mode :
ENHANCEMENT MODE
Polarity/Channel Type :
N-Channel
RoHS :
Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
165nC @ 10V
Supplier Device Package :
TO-264AA (IXFK)
Power Dissipation (Max) :
1400W (Tc)
Transistor Element Material :
SILICON
Series :
HiPerFET™, PolarHV™
Mounting Type :
Through Hole
Reach Compliance Code :
Compliant
Package :
Tube
Terminal Form :
THROUGH-HOLE
Additional Feature :
AVALANCHE RATED
Min Operating Temperature :
-55 °C
JESD-30 Code :
R-PSFM-T3
Number of Terminals :
3
Published :
2011
Number of Elements :
1
Product Status :
Active
Drain to Source Breakdown Voltage :
500V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain Current-Max (Abs) (ID) :
74 A
Package Shape :
RECTANGULAR
Gate to Source Voltage (Vgs) :
30V
Rds On Max :
77 mΩ
JESD-609 Code :
e1
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Manufacturer :
IXYS Corporation
Power Dissipation-Max (Abs) :
1400 W
Packaging :
Tube
Current - Continuous Drain (Id) @ 25°C :
74A Tc
Factory Lead Time :
26 Weeks
Input Capacitance (Ciss) (Max) @ Vds :
9900pF @ 25V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Surface Mount :
No
FET Type :
N-Channel
Pin Count :
3
Package / Case :
TO-264-3, TO-264AA
Base Product Number :
IXFK74
Case Connection :
DRAIN
Mount :
Through Hole
Rds On (Max) @ Id, Vgs :
77m Ω @ 500mA, 10V
DS Breakdown Voltage-Min :
500 V
Operating Temperature :
-55°C~150°C TJ
Continuous Drain Current (ID) :
74A
Power Dissipation :
1.4kW
Drain to Source Resistance :
77 mΩ
Configuration :
SINGLE WITH BUILT-IN DIODE
Vgs(th) (Max) @ Id :
5V @ 4mA
RoHS Status :
ROHS3 Compliant
Lead Free :
Lead Free
Power Dissipation-Max :
1400W Tc
Terminal Position :
Single
Drain-source On Resistance-Max :
0.077Ohm
Transistor Application :
SWITCHING
Avalanche Energy Rating (Eas) :
3000 mJ
Pulsed Drain Current-Max (IDM) :
185A
Element Configuration :
Single
Pbfree Code :
yes
FET Feature :
--
Number of Terminations :
3
Qualification Status :
Not Qualified
Max Power Dissipation :
1.4 kW
Drain to Source Voltage (Vdss) :
500V
JEDEC-95 Code :
TO-264AA
Vgs (Max) :
±30V
Max Operating Temperature :
150 °C
Terminal Finish :
TIN SILVER COPPER
Input Capacitance :
9.9 nF
Datasheets
IXFK74N50P2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK74N50P2 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-264-3, TO-264AA, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, IXFK74N50P2 pinout, IXFK74N50P2 datasheet PDF, IXFK74N50P2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK74N50P2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK74N50P2


N-Channel Tube 77m Ω @ 500mA, 10V ±30V 9900pF @ 25V 165nC @ 10V 500V TO-264-3, TO-264AA

IXFK74N50P2 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 9900pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.There is no drain current on this device since the maximum continuous current it can conduct is 74 A.There is a peak drain current of 185A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 77 mΩ.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 500 V, it should remain above the 500 V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFK74N50P2 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 74A
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 185A.
single MOSFETs transistor is 77 mΩ
a 500V drain to source voltage (Vdss)


IXFK74N50P2 Applications


There are a lot of IXYS
IXFK74N50P2 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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