IXFK73N30
- Mfr.Part #
- IXFK73N30
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 73A TO264AA
- Stock
- 22,101
- In Stock :
- 22,101
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSFM-T3
- Manufacturer :
- IXYS
- Terminal Form :
- THROUGH-HOLE
- Vgs (Max) :
- ±20V
- Mounting Style :
- Through Hole
- Mount :
- Through Hole
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Power Dissipation-Max :
- 500W Tc
- Voltage - Rated DC :
- 300V
- Threshold Voltage :
- 4V
- Power Dissipation-Max (Abs) :
- 500 W
- Resistance :
- 45mOhm
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 300V
- Gate Charge (Qg) (Max) @ Vgs :
- 360nC @ 10V
- Nominal Vgs :
- 4 V
- Current - Continuous Drain (Id) @ 25°C :
- 73A Tc
- Configuration :
- Single
- Tradename :
- HyperFET
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2001
- JESD-609 Code :
- e1
- Turn-Off Delay Time :
- 100 ns
- Package Shape :
- RECTANGULAR
- Continuous Drain Current (ID) :
- 73A
- Drain-source On Resistance-Max :
- 0.045 Ω
- Package :
- Tube
- Transistor Application :
- SWITCHING
- Product Type :
- MOSFET
- Rds On (Max) @ Id, Vgs :
- 45m Ω @ 500mA, 10V
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current Rating :
- 73A
- Number of Terminations :
- 3
- Surface Mount :
- No
- Brand :
- IXYS
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Supplier Device Package :
- TO-264AA (IXFK)
- Rise Time :
- 80ns
- Drain Current-Max (Abs) (ID) :
- 73 A
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Additional Feature :
- AVALANCHE RATED
- DS Breakdown Voltage-Min :
- 300 V
- Length :
- 19.96 mm
- Base Product Number :
- IXFK73
- Pulsed Drain Current-Max (IDM) :
- 292A
- Fall Time (Typ) :
- 50 ns
- Dual Supply Voltage :
- 300V
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-264-3, TO-264AA
- Transistor Type :
- 1 N-Channel
- Number of Pins :
- 3
- Number of Channels :
- 1 Channel
- Transistor Element Material :
- SILICON
- Power Dissipation (Max) :
- 500W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds :
- 9000pF @ 25V
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Number of Terminals :
- 3
- Reach Compliance Code :
- Compliant
- Factory Lead Time :
- 30 Weeks
- Minimum Operating Temperature :
- - 55 C
- Drain to Source Voltage (Vdss) :
- 300V
- Product Status :
- Active
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Terminal Position :
- Single
- Channel Mode :
- Enhancement
- Qualification Status :
- Not Qualified
- Transistor Polarity :
- N-Channel
- Case Connection :
- DRAIN
- Polarity/Channel Type :
- N-Channel
- Series :
- HiPerFET™
- Operating Temperature :
- -55°C~150°C TJ
- FET Feature :
- --
- Power Dissipation Ambient-Max :
- 500 W
- Product Category :
- MOSFET
- JEDEC-95 Code :
- TO-264
- Maximum Operating Temperature :
- + 150 C
- Width :
- 5.13 mm
- Height :
- 26.16 mm
- ECCN Code :
- EAR99
- RoHS :
- Details
- REACH SVHC :
- No SVHC
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Power Dissipation :
- 500W
- Datasheets
- IXFK73N30

N-Channel Tube 45m Ω @ 500mA, 10V ±20V 9000pF @ 25V 360nC @ 10V 300V TO-264-3, TO-264AA
IXFK73N30 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 9000pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 73A amps.In this device, the drain-source breakdown voltage is 300V and VGS=300V, so the drain-source breakdown voltage is 300V in this case.A device can conduct a maximum continuous current of [73 A] according to its drain current.It is [100 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 292A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.The DS breakdown voltage should be maintained above 300 V to maintain normal operation.To operate this transistor, you will need a 300V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFK73N30 Features
a continuous drain current (ID) of 73A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 292A.
a threshold voltage of 4V
a 300V drain to source voltage (Vdss)
IXFK73N30 Applications
There are a lot of IXYS
IXFK73N30 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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