IXFK50N50

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Mfr.Part #
IXFK50N50
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 50A TO-264AA
Stock
10,818
In Stock :
10,818

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Polarity :
N-Channel
Polarity/Channel Type :
N-Channel
Transistor Type :
1 N-Channel
Mount :
Through Hole
RoHS :
Details
Operating Mode :
ENHANCEMENT MODE
Series :
HiPerFET™
Mounting Type :
Through Hole
Power Dissipation :
560W
Published :
2003
FET Type :
N-Channel
Number of Elements :
1
Lead Free :
Lead Free
RoHS Status :
RoHS Compliant
Product Status :
Not For New Designs
Fall Time (Typ) :
45 ns
Operating Temperature :
-55°C~150°C TJ
Package Shape :
RECTANGULAR
Current - Continuous Drain (Id) @ 25°C :
50A Tc
Number of Terminations :
3
Element Configuration :
Single
Number of Channels :
1 Channel
Continuous Drain Current (ID) :
50A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Supplier Device Package :
TO-264AA (IXFK)
Input Capacitance (Ciss) (Max) @ Vds :
9400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs :
330nC @ 10V
Resistance :
100MOhm
Drain Current-Max (Abs) (ID) :
50 A
Vgs (Max) :
±20V
Drain to Source Voltage (Vdss) :
500V
Pbfree Code :
yes
Power Dissipation (Max) :
560W (Tc)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drive Voltage (Max Rds On,Min Rds On) :
10V
Configuration :
Single
Brand :
IXYS
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
DRAIN
Maximum Operating Temperature :
+ 150 C
Vgs(th) (Max) @ Id :
4.5V @ 8mA
Width :
5.13 mm
Rise Time :
60ns
Product Category :
MOSFET
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
Reach Compliance Code :
Compliant
Package / Case :
TO-264-3, TO-264AA
Additional Feature :
AVALANCHE RATED
Pulsed Drain Current-Max (IDM) :
200A
Packaging :
Tube
Package :
Tube
Height :
26.16 mm
Product Type :
MOSFET
Drain to Source Breakdown Voltage :
500V
JEDEC-95 Code :
TO-264AA
Mounting Style :
Through Hole
Power Dissipation-Max :
560W Tc
Surface Mount :
No
Gate to Source Voltage (Vgs) :
20V
Manufacturer :
IXYS
Terminal Form :
THROUGH-HOLE
Turn-Off Delay Time :
120 ns
DS Breakdown Voltage-Min :
500 V
Minimum Operating Temperature :
- 55 C
Number of Pins :
3
Channel Mode :
Enhancement
JESD-30 Code :
R-PSFM-T3
Power Dissipation-Max (Abs) :
560 W
Pin Count :
3
Rds On (Max) @ Id, Vgs :
80m Ω @ 25A, 10V
Number of Terminals :
3
Drain-source On Resistance-Max :
0.1 Ω
Terminal Position :
Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Length :
19.96 mm
Tradename :
HyperFET
Qualification Status :
Not Qualified
Base Product Number :
IXFK50
FET Feature :
--
Datasheets
IXFK50N50
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK50N50 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Channels:1 Channel, Package / Case:TO-264-3, TO-264AA, Number of Pins:3, IXFK50N50 pinout, IXFK50N50 datasheet PDF, IXFK50N50 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK50N50 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK50N50


N-Channel Tube 80m Ω @ 25A, 10V ±20V 9400pF @ 25V 330nC @ 10V 500V TO-264-3, TO-264AA

IXFK50N50 Overview


A device's maximum input capacitance is 9400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 50A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.Its drain current is 50 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 120 ns.Its maximum pulsed drain current is 200A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 500 V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFK50N50 Features


a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 120 ns
based on its rated peak drain current 200A.
a 500V drain to source voltage (Vdss)


IXFK50N50 Applications


There are a lot of IXYS
IXFK50N50 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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