IXFK50N50
- Mfr.Part #
- IXFK50N50
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 50A TO-264AA
- Stock
- 10,818
- In Stock :
- 10,818
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Polarity :
- N-Channel
- Polarity/Channel Type :
- N-Channel
- Transistor Type :
- 1 N-Channel
- Mount :
- Through Hole
- RoHS :
- Details
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- HiPerFET™
- Mounting Type :
- Through Hole
- Power Dissipation :
- 560W
- Published :
- 2003
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- RoHS Status :
- RoHS Compliant
- Product Status :
- Not For New Designs
- Fall Time (Typ) :
- 45 ns
- Operating Temperature :
- -55°C~150°C TJ
- Package Shape :
- RECTANGULAR
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Number of Channels :
- 1 Channel
- Continuous Drain Current (ID) :
- 50A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Supplier Device Package :
- TO-264AA (IXFK)
- Input Capacitance (Ciss) (Max) @ Vds :
- 9400pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 330nC @ 10V
- Resistance :
- 100MOhm
- Drain Current-Max (Abs) (ID) :
- 50 A
- Vgs (Max) :
- ±20V
- Drain to Source Voltage (Vdss) :
- 500V
- Pbfree Code :
- yes
- Power Dissipation (Max) :
- 560W (Tc)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Configuration :
- Single
- Brand :
- IXYS
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- Maximum Operating Temperature :
- + 150 C
- Vgs(th) (Max) @ Id :
- 4.5V @ 8mA
- Width :
- 5.13 mm
- Rise Time :
- 60ns
- Product Category :
- MOSFET
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- Compliant
- Package / Case :
- TO-264-3, TO-264AA
- Additional Feature :
- AVALANCHE RATED
- Pulsed Drain Current-Max (IDM) :
- 200A
- Packaging :
- Tube
- Package :
- Tube
- Height :
- 26.16 mm
- Product Type :
- MOSFET
- Drain to Source Breakdown Voltage :
- 500V
- JEDEC-95 Code :
- TO-264AA
- Mounting Style :
- Through Hole
- Power Dissipation-Max :
- 560W Tc
- Surface Mount :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Manufacturer :
- IXYS
- Terminal Form :
- THROUGH-HOLE
- Turn-Off Delay Time :
- 120 ns
- DS Breakdown Voltage-Min :
- 500 V
- Minimum Operating Temperature :
- - 55 C
- Number of Pins :
- 3
- Channel Mode :
- Enhancement
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation-Max (Abs) :
- 560 W
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 25A, 10V
- Number of Terminals :
- 3
- Drain-source On Resistance-Max :
- 0.1 Ω
- Terminal Position :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Length :
- 19.96 mm
- Tradename :
- HyperFET
- Qualification Status :
- Not Qualified
- Base Product Number :
- IXFK50
- FET Feature :
- --
- Datasheets
- IXFK50N50

N-Channel Tube 80m Ω @ 25A, 10V ±20V 9400pF @ 25V 330nC @ 10V 500V TO-264-3, TO-264AA
IXFK50N50 Overview
A device's maximum input capacitance is 9400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 50A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.Its drain current is 50 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 120 ns.Its maximum pulsed drain current is 200A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 500 V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFK50N50 Features
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 120 ns
based on its rated peak drain current 200A.
a 500V drain to source voltage (Vdss)
IXFK50N50 Applications
There are a lot of IXYS
IXFK50N50 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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