IXFK48N50

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Mfr.Part #
IXFK48N50
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 48A TO264AA
Stock
3,761
In Stock :
3,761

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Supplier Device Package :
TO-264AA (IXFK)
RoHS Status :
ROHS3 Compliant
Vgs (Max) :
±20V
Transistor Polarity :
N-Channel
Tradename :
HiPerFET
Pulsed Drain Current-Max (IDM) :
192A
Element Configuration :
Single
Turn On Delay Time :
33 ns
Power Dissipation :
500W
Drain-source On Resistance-Max :
0.1 Ω
Pbfree Code :
yes
DS Breakdown Voltage-Min :
500 V
Current - Continuous Drain (Id) @ 25°C :
48A Tc
Package :
Tube
Mount :
Through Hole
Lead Free :
Lead Free
RoHS :
Details
Package Shape :
RECTANGULAR
Base Product Number :
IXFK48
FET Type :
N-Channel
Series :
HiPerFET™
Product Type :
MOSFET
Fall Time (Typ) :
10 ns
Drain to Source Voltage (Vdss) :
500V
Transistor Application :
SWITCHING
Transistor Type :
1 N-Channel
Additional Feature :
AVALANCHE RATED
Operating Mode :
ENHANCEMENT MODE
Product Status :
Active
Number of Terminations :
3
Reach Compliance Code :
Compliant
Input Capacitance (Ciss) (Max) @ Vds :
7000pF @ 25V
Package / Case :
TO-264-3, TO-264AA
Drain to Source Breakdown Voltage :
500V
JEDEC-95 Code :
TO-264AA
Number of Elements :
1
Maximum Operating Temperature :
+ 150 C
Subcategory :
MOSFETs
Vgs(th) (Max) @ Id :
4V @ 4mA
Number of Pins :
3
Brand :
IXYS
Number of Terminals :
3
Manufacturer :
IXYS
Width :
5.13mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Style :
Through Hole
Terminal Form :
THROUGH-HOLE
Configuration :
Single
Case Connection :
DRAIN
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation-Max :
500W Tc
Channel Mode :
Enhancement
Turn-Off Delay Time :
75 ns
Resistance :
100MOhm
Transistor Element Material :
SILICON
Power Dissipation (Max) :
500W (Tc)
Packaging :
Tube
Rise Time :
22ns
Number of Channels :
1 Channel
JESD-30 Code :
R-PSFM-T3
Minimum Operating Temperature :
- 55 C
Avalanche Energy Rating (Eas) :
2500 mJ
Published :
2003
Mounting Type :
Through Hole
Surface Mount :
No
Product Category :
MOSFET
Qualification Status :
Not Qualified
Polarity/Channel Type :
N-Channel
Height :
26.16mm
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Feature :
--
Terminal Position :
Single
Length :
19.96mm
Operating Temperature :
-55°C~150°C TJ
Pin Count :
3
Rds On (Max) @ Id, Vgs :
100m Ω @ 24A, 10V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Continuous Drain Current (ID) :
48A
Gate to Source Voltage (Vgs) :
20V
Datasheets
IXFK48N50
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK48N50 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-264-3, TO-264AA, Number of Pins:3, Number of Channels:1 Channel, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, IXFK48N50 pinout, IXFK48N50 datasheet PDF, IXFK48N50 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK48N50 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK48N50


N-Channel Tube 100m Ω @ 24A, 10V ±20V 7000pF @ 25V 190nC @ 10V 500V TO-264-3, TO-264AA

IXFK48N50Q Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The maximum input capacitance of this device is 7000pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 48A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 75 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 192A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 33 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFK48N50Q Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 48A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 192A.
a 500V drain to source voltage (Vdss)


IXFK48N50Q Applications


There are a lot of IXYS
IXFK48N50Q applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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