IXFK48N50
- Mfr.Part #
- IXFK48N50
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 48A TO264AA
- Stock
- 3,761
- In Stock :
- 3,761
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Supplier Device Package :
- TO-264AA (IXFK)
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Transistor Polarity :
- N-Channel
- Tradename :
- HiPerFET
- Pulsed Drain Current-Max (IDM) :
- 192A
- Element Configuration :
- Single
- Turn On Delay Time :
- 33 ns
- Power Dissipation :
- 500W
- Drain-source On Resistance-Max :
- 0.1 Ω
- Pbfree Code :
- yes
- DS Breakdown Voltage-Min :
- 500 V
- Current - Continuous Drain (Id) @ 25°C :
- 48A Tc
- Package :
- Tube
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- RoHS :
- Details
- Package Shape :
- RECTANGULAR
- Base Product Number :
- IXFK48
- FET Type :
- N-Channel
- Series :
- HiPerFET™
- Product Type :
- MOSFET
- Fall Time (Typ) :
- 10 ns
- Drain to Source Voltage (Vdss) :
- 500V
- Transistor Application :
- SWITCHING
- Transistor Type :
- 1 N-Channel
- Additional Feature :
- AVALANCHE RATED
- Operating Mode :
- ENHANCEMENT MODE
- Product Status :
- Active
- Number of Terminations :
- 3
- Reach Compliance Code :
- Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 7000pF @ 25V
- Package / Case :
- TO-264-3, TO-264AA
- Drain to Source Breakdown Voltage :
- 500V
- JEDEC-95 Code :
- TO-264AA
- Number of Elements :
- 1
- Maximum Operating Temperature :
- + 150 C
- Subcategory :
- MOSFETs
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Number of Pins :
- 3
- Brand :
- IXYS
- Number of Terminals :
- 3
- Manufacturer :
- IXYS
- Width :
- 5.13mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Style :
- Through Hole
- Terminal Form :
- THROUGH-HOLE
- Configuration :
- Single
- Case Connection :
- DRAIN
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 500W Tc
- Channel Mode :
- Enhancement
- Turn-Off Delay Time :
- 75 ns
- Resistance :
- 100MOhm
- Transistor Element Material :
- SILICON
- Power Dissipation (Max) :
- 500W (Tc)
- Packaging :
- Tube
- Rise Time :
- 22ns
- Number of Channels :
- 1 Channel
- JESD-30 Code :
- R-PSFM-T3
- Minimum Operating Temperature :
- - 55 C
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Published :
- 2003
- Mounting Type :
- Through Hole
- Surface Mount :
- No
- Product Category :
- MOSFET
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- N-Channel
- Height :
- 26.16mm
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Feature :
- --
- Terminal Position :
- Single
- Length :
- 19.96mm
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 24A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 48A
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- IXFK48N50

N-Channel Tube 100m Ω @ 24A, 10V ±20V 7000pF @ 25V 190nC @ 10V 500V TO-264-3, TO-264AA
IXFK48N50Q Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.The maximum input capacitance of this device is 7000pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 48A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 75 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 192A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 33 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFK48N50Q Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 48A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 192A.
a 500V drain to source voltage (Vdss)
IXFK48N50Q Applications
There are a lot of IXYS
IXFK48N50Q applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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