IXFK44N80P
- Mfr.Part #
- IXFK44N80P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 44A TO264AA
- Stock
- 600
- In Stock :
- 600
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- REACH SVHC :
- No SVHC
- JESD-30 Code :
- R-PSFM-T3
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 27 ns
- FET Feature :
- --
- Continuous Drain Current Id :
- 44A
- Length :
- 19.96 mm
- Transistor Type :
- 1 N-Channel
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation (Max) :
- 1040W (Tc)
- Channel Mode :
- Enhancement
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-264AA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Manufacturer :
- IXYS
- Gate Charge (Qg) (Max) @ Vgs :
- 198nC @ 10V
- Input Capacitance :
- 12 nF
- Series :
- HiPerFET™, PolarHT™
- Number of Terminals :
- 3
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- RoHS :
- Details
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Max Operating Temperature :
- 150 °C
- Qualification Status :
- Not Qualified
- Case Connection :
- DRAIN
- Published :
- 2006
- Vgs (Max) :
- ±30V
- Lead Free :
- Lead Free
- DS Breakdown Voltage-Min :
- 800 V
- Brand :
- IXYS
- Threshold Voltage :
- 5V
- Terminal Form :
- THROUGH-HOLE
- RoHS Status :
- ROHS3 Compliant
- Rds On Max :
- 190 mΩ
- Qualification :
- -
- Subcategory :
- MOSFETs
- Drain to Source Resistance :
- 190 mΩ
- Number of Pins :
- 3
- Reach Compliance Code :
- Compliant
- Avalanche Energy Rating (Eas) :
- 3400 mJ
- Product Category :
- MOSFET
- Channel Type :
- N Channel
- Surface Mount :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 12000pF @ 25V
- Minimum Operating Temperature :
- - 55 C
- Min Operating Temperature :
- -55 °C
- Power Dissipation :
- 1.04kW
- Gate to Source Voltage (Vgs) :
- 30V
- Turn-Off Delay Time :
- 75 ns
- Supplier Device Package :
- TO-264AA (IXFK)
- Pulsed Drain Current-Max (IDM) :
- 100 A
- Package Shape :
- RECTANGULAR
- Maximum Operating Temperature :
- + 150 C
- Power Dissipation-Max :
- 1040W Tc
- Package :
- Tube
- Drain-source On Resistance-Max :
- 0.19 Ω
- Rise Time :
- 22ns
- Continuous Drain Current (ID) :
- 44A
- Terminal Position :
- Single
- Tradename :
- HiPerFET
- Package / Case :
- TO-264-3, TO-264AA
- Number of Channels :
- 1 Channel
- Resistance :
- 190mOhm
- Mounting Type :
- Through Hole
- Height :
- 26.16 mm
- Product Status :
- Active
- Mount :
- Through Hole
- Element Configuration :
- Single
- Width :
- 5.13 mm
- Base Product Number :
- IXFK44
- Drain to Source Voltage (Vdss) :
- 800V
- Polarity/Channel Type :
- N-Channel
- JESD-609 Code :
- e1
- Drain to Source Breakdown Voltage :
- 800V
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 22A, 10V
- FET Type :
- N-Channel
- Number of Terminations :
- 3
- Mounting Style :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Factory Lead Time :
- 30 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- MSL :
- -
- Configuration :
- Single
- Max Power Dissipation :
- 1.04 kW
- Transistor Polarity :
- N-Channel
- Product Type :
- MOSFET
- Packaging :
- Tube
- Pbfree Code :
- yes
- Datasheets
- IXFK44N80P

N-Channel Tube 190m Ω @ 22A, 10V ±30V 12000pF @ 25V 198nC @ 10V 800V TO-264-3, TO-264AA
IXFK44N80P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3400 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 12000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 800V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 800V.As a result of its turn-off delay time, which is 75 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 100 A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 190 mΩ.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 5V.In order for DS breakdown voltage to remain above 800 V, it should remain above the 800 V level.The transistor must receive a 800V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFK44N80P Features
the avalanche energy rating (Eas) is 3400 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 100 A.
single MOSFETs transistor is 190 mΩ
a threshold voltage of 5V
a 800V drain to source voltage (Vdss)
IXFK44N80P Applications
There are a lot of IXYS
IXFK44N80P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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