IXFK44N50F
- Mfr.Part #
- IXFK44N50F
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 44A TO264
- Stock
- 2,749
- In Stock :
- 2,749
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Qualification Status :
- Not Qualified
- Operating Mode :
- ENHANCEMENT MODE
- Package Shape :
- RECTANGULAR
- Vgs(th) (Max) @ Id :
- 5.5V @ 4mA
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Polarity/Channel Type :
- N-Channel
- JEDEC-95 Code :
- TO-264AA
- Drain to Source Breakdown Voltage :
- 500V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5500pF @ 25V
- Mounting Type :
- Through Hole
- Fall Time (Typ) :
- 8 ns
- Power Dissipation :
- 500W
- Package / Case :
- TO-264-3, TO-264AA
- FET Feature :
- --
- Reach Compliance Code :
- Compliant
- Number of Terminals :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e1
- Power Dissipation-Max (Abs) :
- 500 W
- Drain-source On Resistance-Max :
- 0.12Ohm
- FET Type :
- N-Channel
- Terminal Form :
- THROUGH-HOLE
- Rise Time :
- 18ns
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 22A, 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Drain to Source Voltage (Vdss) :
- 500V
- Number of Terminations :
- 3
- Max Power Dissipation :
- 500 W
- Min Operating Temperature :
- -55 °C
- Supplier Device Package :
- TO-264 (IXFK)
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Case Connection :
- DRAIN
- REACH SVHC :
- No SVHC
- RoHS :
- Compliant
- Max Operating Temperature :
- 150 °C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- AVALANCHE RATED
- Pulsed Drain Current-Max (IDM) :
- 184A
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Series :
- HiPerRF™
- Power Dissipation (Max) :
- 500W (Tc)
- DS Breakdown Voltage-Min :
- 500 V
- Pin Count :
- 3
- Terminal Position :
- Single
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain Current-Max (Abs) (ID) :
- 44 A
- Continuous Drain Current (ID) :
- 44A
- Surface Mount :
- No
- Turn-Off Delay Time :
- 53 ns
- Power Dissipation-Max :
- 500W Tc
- Vgs (Max) :
- ±20V
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Product Status :
- Obsolete
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 156nC @ 10V
- Packaging :
- Tube
- Published :
- 2002
- RoHS Status :
- RoHS Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Manufacturer :
- IXYS Corporation
- Drain to Source Resistance :
- 120 mΩ
- Base Product Number :
- IXFK44
- Package :
- Tube
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Datasheets
- IXFK44N50F

N-Channel Tube 120m Ω @ 22A, 10V ±20V 5500pF @ 25V 156nC @ 10V 500V TO-264-3, TO-264AA
IXFK44N50F Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2500 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5500pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 44A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Drain current refers to the maximum continuous current a device can conduct, and it is 44 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 53 ns.Peak drain current is 184A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 120 mΩ when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 500 V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFK44N50F Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 53 ns
based on its rated peak drain current 184A.
single MOSFETs transistor is 120 mΩ
a 500V drain to source voltage (Vdss)
IXFK44N50F Applications
There are a lot of IXYS-RF
IXFK44N50F applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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