IXFK44N50
- Mfr.Part #
- IXFK44N50
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 44A TO-264AA
- Stock
- 21,028
- In Stock :
- 21,028
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Type :
- 1 N-Channel
- Number of Channels :
- 1 Channel
- Terminal Position :
- Single
- Series :
- HiPerFET™, PolarHT™
- Current Rating :
- 44A
- Drain to Source Breakdown Voltage :
- 500V
- Operating Mode :
- ENHANCEMENT MODE
- DS Breakdown Voltage-Min :
- 500 V
- Tradename :
- HiPerFET
- Continuous Drain Current Id :
- 44A
- Avalanche Energy Rating (Eas) :
- 1700 mJ
- Resistance :
- 140mOhm
- Package :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package Shape :
- RECTANGULAR
- Pin Count :
- 3
- Qualification :
- -
- Transistor Polarity :
- N-Channel
- Mounting Type :
- Through Hole
- Channel Type :
- N Channel
- Power Dissipation :
- 650W
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Reach Compliance Code :
- Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 5440pF @ 25V
- Drain-source On Resistance-Max :
- 0.14 Ω
- Published :
- 2006
- Width :
- 5.13 mm
- Vgs (Max) :
- ±30V
- RoHS :
- Details
- Power Dissipation-Max :
- 658W Tc
- Power Dissipation (Max) :
- 658W (Tc)
- Drain to Source Voltage (Vdss) :
- 500V
- FET Type :
- N-Channel
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 44A
- Surface Mount :
- No
- Mount :
- Through Hole
- Number of Terminals :
- 3
- Brand :
- IXYS
- Pulsed Drain Current-Max (IDM) :
- 110A
- Polarity/Channel Type :
- N-Channel
- Turn-Off Delay Time :
- 85 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Terminations :
- 3
- Product Category :
- MOSFET
- JESD-609 Code :
- e1
- Channel Mode :
- Enhancement
- Gate Charge (Qg) (Max) @ Vgs :
- 98nC @ 10V
- Factory Lead Time :
- 30 Weeks
- Lead Free :
- Lead Free
- Height :
- 26.16 mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Form :
- THROUGH-HOLE
- Supplier Device Package :
- TO-264AA (IXFK)
- Product Status :
- Active
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 500V
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-264AA
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 29ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Additional Feature :
- AVALANCHE RATED
- Package / Case :
- TO-264-3, TO-264AA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Style :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 30V
- Base Product Number :
- IXFK44
- Length :
- 19.96 mm
- Configuration :
- Single
- Product Type :
- MOSFET
- Fall Time (Typ) :
- 27 ns
- Rds On (Max) @ Id, Vgs :
- 140m Ω @ 22A, 10V
- Qualification Status :
- Not Qualified
- Subcategory :
- MOSFETs
- FET Feature :
- --
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Maximum Operating Temperature :
- + 150 C
- Manufacturer :
- IXYS
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- JESD-30 Code :
- R-PSFM-T3
- Case Connection :
- DRAIN
- Minimum Operating Temperature :
- - 55 C
- Datasheets
- IXFK44N50

N-Channel Tube 140m Ω @ 22A, 10V ±30V 5440pF @ 25V 98nC @ 10V 500V TO-264-3, TO-264AA
IXFK44N50P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1700 mJ.The maximum input capacitance of this device is 5440pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 44A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 85 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 110A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 500 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 500V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFK44N50P Features
the avalanche energy rating (Eas) is 1700 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 110A.
a 500V drain to source voltage (Vdss)
IXFK44N50P Applications
There are a lot of IXYS
IXFK44N50P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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