IXFK33N50

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Mfr.Part #
IXFK33N50
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 33A TO264AA
Stock
9,273
In Stock :
9,273

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Surface Mount :
No
Base Product Number :
IXFK33
Terminal Position :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mount :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
227nC @ 10V
Additional Feature :
AVALANCHE RATED
Power Dissipation :
416W
JESD-30 Code :
R-PSFM-T3
Vgs (Max) :
±20V
Mounting Type :
Through Hole
Operating Mode :
ENHANCEMENT MODE
Power Dissipation-Max (Abs) :
416 W
Vgs(th) (Max) @ Id :
4V @ 4mA
Lead Free :
Lead Free
JEDEC-95 Code :
TO-264
Series :
HiPerFET™
Element Configuration :
Single
Power Dissipation (Max) :
416W (Tc)
Terminal Form :
THROUGH-HOLE
Number of Elements :
1
Manufacturer :
IXYS Corporation
Transistor Element Material :
SILICON
Drain to Source Breakdown Voltage :
500V
Avalanche Energy Rating (Eas) :
2500 mJ
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
160m Ω @ 16.5A, 10V
Drain Current-Max (Abs) (ID) :
33 A
Pulsed Drain Current-Max (IDM) :
132 A
Product Status :
Obsolete
Polarity/Channel Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
33A Tc
Number of Pins :
3
Number of Terminals :
3
Continuous Drain Current (ID) :
33A
Resistance :
150mOhm
Package :
Tube
Radiation Hardening :
No
Operating Temperature :
-55°C~150°C TJ
Package / Case :
TO-264-3, TO-264AA
Configuration :
SINGLE WITH BUILT-IN DIODE
Fall Time (Typ) :
23 ns
Qualification Status :
Not Qualified
RoHS Status :
RoHS Compliant
FET Feature :
--
Package Shape :
RECTANGULAR
DS Breakdown Voltage-Min :
500 V
Gate to Source Voltage (Vgs) :
20V
Turn-Off Delay Time :
110 ns
Pbfree Code :
yes
Input Capacitance (Ciss) (Max) @ Vds :
5700pF @ 25V
Drain to Source Voltage (Vdss) :
500V
Reach Compliance Code :
Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Supplier Device Package :
TO-264AA (IXFK)
Power Dissipation-Max :
416W Tc
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Rise Time :
42ns
Published :
2000
Drain-source On Resistance-Max :
0.16 Ω
Number of Terminations :
3
Packaging :
Tube
Case Connection :
DRAIN
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Application :
SWITCHING
Pin Count :
3
Datasheets
IXFK33N50
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFK33N50 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, IXFK33N50 pinout, IXFK33N50 datasheet PDF, IXFK33N50 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFK33N50 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFK33N50


N-Channel Tube 160m Ω @ 16.5A, 10V ±20V 5700pF @ 25V 227nC @ 10V 500V TO-264-3, TO-264AA

IXFK33N50 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5700pF @ 25V.This device conducts a continuous drain current (ID) of 33A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 33 A.When the device is turned off, a turn-off delay time of 110 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 132 A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 500 V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFK33N50 Features


the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 33A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 132 A.
a 500V drain to source voltage (Vdss)


IXFK33N50 Applications


There are a lot of IXYS
IXFK33N50 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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