IXFK32N90P
- Mfr.Part #
- IXFK32N90P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 32A TO264AA
- Stock
- 8,067
- In Stock :
- 8,067
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max (Abs) :
- 960 W
- Additional Feature :
- AVALANCHE RATED
- JEDEC-95 Code :
- TO-264AA
- Product Status :
- Active
- Reach Compliance Code :
- Compliant
- Pin Count :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Vgs(th) (Max) @ Id :
- 6.5V @ 1mA
- Number of Terminals :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Channels :
- 1 Channel
- Number of Terminations :
- 3
- Published :
- 2011
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- Manufacturer :
- IXYS Corporation
- Rds On (Max) @ Id, Vgs :
- 300m Ω @ 16A, 10V
- Transistor Element Material :
- SILICON
- FET Feature :
- --
- Package / Case :
- TO-264-3, TO-264AA
- Gate Charge (Qg) (Max) @ Vgs :
- 215nC @ 10V
- Number of Elements :
- 1
- Package Shape :
- RECTANGULAR
- Power Dissipation (Max) :
- 960W (Tc)
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation-Max :
- 960W Tc
- Drain to Source Voltage (Vdss) :
- 900V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±30V
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Drain Current-Max (Abs) (ID) :
- 32 A
- Input Capacitance (Ciss) (Max) @ Vds :
- 10600pF @ 25V
- Supplier Device Package :
- TO-264AA (IXFK)
- Transistor Polarity :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 80A
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 26 Weeks
- Base Product Number :
- IXFK32
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.3Ohm
- Continuous Drain Current (ID) :
- 32A
- Mounting Type :
- Through Hole
- Package :
- Tube
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Surface Mount :
- No
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- DS Breakdown Voltage-Min :
- 900V
- Polarity/Channel Type :
- N-Channel
- Mounting Style :
- Through Hole
- Terminal Form :
- THROUGH-HOLE
- Packaging :
- Tube
- Series :
- PolarHT™ HiPerFET™
- Datasheets
- IXFK32N90P

N-Channel Tube 300m Ω @ 16A, 10V ±30V 10600pF @ 25V 215nC @ 10V 900V TO-264-3, TO-264AA
IXFK32N90P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 2000 mJ.A device's maximal input capacitance is 10600pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 32A, which represents the maximum continuous current it can conduct.In this device, the drain current is 32 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 80A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 900V.This transistor requires a 900V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFK32N90P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 32A
based on its rated peak drain current 80A.
a 900V drain to source voltage (Vdss)
IXFK32N90P Applications
There are a lot of IXYS
IXFK32N90P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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